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JANSF2N7591U3

更新时间: 2024-09-16 14:56:35
品牌 Logo 应用领域
英飞凌 - INFINEON /
页数 文件大小 规格书
14页 1359K
描述
Rad hard, 200V, 16A, single, N-channel MOSFET, R6 in a SMD-0.5 package - SMD-0.5, 300 krad(Si) TID, QPL

JANSF2N7591U3 技术参数

生命周期:Active包装说明:CHIP CARRIER, R-CBCC-N3
Reach Compliance Code:compliantECCN代码:EAR99
风险等级:5.38雪崩能效等级(Eas):60 mJ
外壳连接:DRAIN配置:SINGLE WITH BUILT-IN DIODE
最小漏源击穿电压:200 V最大漏极电流 (ID):19 A
最大漏源导通电阻:0.13 ΩFET 技术:METAL-OXIDE SEMICONDUCTOR
JESD-30 代码:R-CBCC-N3元件数量:1
端子数量:3工作模式:ENHANCEMENT MODE
封装主体材料:CERAMIC, METAL-SEALED COFIRED封装形状:RECTANGULAR
封装形式:CHIP CARRIER极性/信道类型:N-CHANNEL
最大脉冲漏极电流 (IDM):76 A认证状态:Qualified
表面贴装:YES端子形式:NO LEAD
端子位置:BOTTOM晶体管应用:SWITCHING
晶体管元件材料:SILICONBase Number Matches:1

JANSF2N7591U3 数据手册

 浏览型号JANSF2N7591U3的Datasheet PDF文件第2页浏览型号JANSF2N7591U3的Datasheet PDF文件第3页浏览型号JANSF2N7591U3的Datasheet PDF文件第4页浏览型号JANSF2N7591U3的Datasheet PDF文件第5页浏览型号JANSF2N7591U3的Datasheet PDF文件第6页浏览型号JANSF2N7591U3的Datasheet PDF文件第7页 
IRHNJ67230 (JANSR2N7591U3)  
PD-96923F  
Radiation Hardened Power MOSFET  
Surface Mount (SMD-0.5)  
200V, 16A, N-channel, R6 Technology  
Product Summary  
Features  
Single event effect (SEE) hardened  
Part number: IRHNJ67230 (JANSR2N7591U3),  
IRHNJ63230 (JANSF2N7591U3)  
REF: MIL-PRF-19500/746  
Radiation level: 100 krad(Si),  
300 krad(Si)  
RDS(on),max : 130m  
ID : 16A  
Low RDS(on)  
Low total gate charge  
Simple drive requirements  
Hermetically sealed  
Ceramic package  
Light weight  
Surface mount  
ESD rating: Class 3A per MIL-STD-750, Method 1020  
Potential Applications  
DC-DC converter  
Motor drives  
SMD-0.5  
Product Validation  
Qualified to JANS screening flow according to MIL-PRF-19500 for space applications  
Description  
IR HiRel R6 technology provides high performance power MOSFETs for space applications. This technology has  
over a decade of proven performance and reliability in satellite applications. These devices have been  
characterized for both Total Dose and Single Event Effects (SEE). The combination of low RDS(on) and low gate  
charge reduces the power losses in switching applications such as DC to DC converters and motor control. These  
devices retain all of the well established advantages of MOSFETs such as voltage control, fast switching and  
temperature stability of electrical parameters.  
Ordering Information  
Table 1  
Part number  
IRHNJ67230  
Ordering options  
Package  
Screening Level  
COTS  
TID Level  
SMD-0.5  
100 krad(Si)  
100 krad(Si)  
100 krad(Si)  
100 krad(Si)  
300 krad(Si)  
300 krad(Si)  
IRHNJ67230SCV  
IRHNJ67230SCS  
JANSR2N7591U3  
IRHNJ63230  
SMD-0.5  
SMD-0.5  
SMD-0.5  
SMD-0.5  
SMD-0.5  
JANTXV equivalent  
S-Level  
JANS  
COTS  
JANSF2N7591U3  
JANS  
Please read the Important Notice and Warnings at the end of this document  
page 1 of 14  
www.infineon.com/irhirel  
2021-08-06  
 
 
 
 
 

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