生命周期: | Active | 包装说明: | CHIP CARRIER, R-CBCC-N3 |
Reach Compliance Code: | compliant | ECCN代码: | EAR99 |
风险等级: | 5.38 | 雪崩能效等级(Eas): | 60 mJ |
外壳连接: | DRAIN | 配置: | SINGLE WITH BUILT-IN DIODE |
最小漏源击穿电压: | 200 V | 最大漏极电流 (ID): | 19 A |
最大漏源导通电阻: | 0.13 Ω | FET 技术: | METAL-OXIDE SEMICONDUCTOR |
JESD-30 代码: | R-CBCC-N3 | 元件数量: | 1 |
端子数量: | 3 | 工作模式: | ENHANCEMENT MODE |
封装主体材料: | CERAMIC, METAL-SEALED COFIRED | 封装形状: | RECTANGULAR |
封装形式: | CHIP CARRIER | 极性/信道类型: | N-CHANNEL |
最大脉冲漏极电流 (IDM): | 76 A | 认证状态: | Qualified |
表面贴装: | YES | 端子形式: | NO LEAD |
端子位置: | BOTTOM | 晶体管应用: | SWITCHING |
晶体管元件材料: | SILICON | Base Number Matches: | 1 |
型号 | 品牌 | 获取价格 | 描述 | 数据表 |
JANSF2N7591U3C | INFINEON |
获取价格 |
Rad hard, 200V, 16A, single, N-channel MOSFET, R6 in a SMD-0.5 package - SMD-0.5, 300 krad | |
JANSF2N7616UB | INFINEON |
获取价格 |
Rad hard, 60V, 0.8A, single, N-channel MOSFET, R7 in a UB package - UB, 300 krad(Si) TID, | |
JANSF2N7616UBC | INFINEON |
获取价格 |
Rad hard, 60V, 0.8A, single, N-channel MOSFET, R7 in a UBC package - UBC, 300 krad(Si) TID | |
JANSF2N7616UBCN | INFINEON |
获取价格 |
Rad hard, 60V, 0.8A, single, N-channel MOSFET, R7 in a UBC package - UBCN, 300 krad(Si) TI | |
JANSF2N7616UBN | INFINEON |
获取价格 |
Rad hard, 60V, 0.8A, single, N-channel MOSFET, R7 in a UB package - UBN, 300 krad(Si) TID, | |
JANSF2N7624U3 | INFINEON |
获取价格 |
Rad hard, -60V, -22A, single, P-channel MOSFET, R7 in a SMD-0.5 package - SMD-0.5, 300 kra | |
JANSF2N7625T3 | INFINEON |
获取价格 |
Power Field-Effect Transistor, | |
JANSF2N7626UB | INFINEON |
获取价格 |
Rad hard, -60V, -0.53A, single, P-channel MOSFET, R7 in a UB package - UB, 300 krad(Si) TI | |
JANSF2N7626UBC | INFINEON |
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Small Signal Field-Effect Transistor, 0.53A I(D), 60V, 1-Element, P-Channel, Silicon, Meta | |
JANSF2N7626UBCN | INFINEON |
获取价格 |
Small Signal Field-Effect Transistor, 0.53A I(D), 60V, 1-Element, P-Channel, Silicon, Meta |