Datasheet > JANSF2N7651U8C

JANSF2N7651U8C

更新时间： 2024-11-19 14:56:11

品牌	Logo	应用领域
英飞凌 - INFINEON		/
页数	文件大小	规格书
14页	1866K
描述
Rad hard, 100V, 23A, single, N-channel MOSFET, R9 in a SMD-0.2C package - SMD-0.2C, 300 krad(Si) TID, QPL

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JANSF2N7651U8C 数据手册

IRHNMC9A7120 (JANSR2N7651U8C)

PD-97974A

Radiation Hardened Power MOSFET

Surface Mount (SMD-0.2 Ceramic Lid)

100V, 23A, N-channel, R9 Superjunction Technology

Features

Product Summary



Single event effect (SEE) hardened



BV_DSS: 100V

I_D: 23A

R_DS(on),max: 55m

Q_Gmax: 23nC

(up to LET of 89.8 MeV·cm²/mg)



Low R_DS(on)

Fast switching

REF: MIL-PRF-19500/776

Low total gate charge

Simple drive requirements

Hermetically sealed

Ceramic package

Light weight

Surface mount

ESD rating: Class 1C per MIL-STD-750, Method 1020

Potential Applications

SMD-0.2 (Ceramic Lid)



Isolated DC-DC converter

Motor drives

Point-of-Load (PoL) converter

Product Validation

Qualified to JANS screening flow according to MIL-PRF-19500 for space applications

Description

IR HiRel R9 technology provides superior power MOSFETs for space applications. These devices have improved

immunity to Single Event Effect (SEE) and have been characterized for useful performance with Linear Energy

Transfer (LET) up to 89.8 MeV·cm²/mg. Their combination of low R_DS(on)and fast switching times will allow for

better performance in applications such as DC-DC converter or motor drives. These devices retain all of the well-

established advantages of MOSFETs such as voltage control, fast switching and temperature stability of electrical

parameters.

Ordering Information

Table 1

Ordering options

Part number

IRHNMC9A7120

Package

Screening Level

COTS

TID Level

SMD-0.2 (Ceramic Lid)

100 krad(Si)

300 krad(Si)

JANSR2N7651U8C

IRHNMC9A3120

JANS

COTS

JANSF2N7651U8C

JANS

Please read the Important Notice and Warnings at the end of this document

page 1 of 14

www.infineon.com/irhirel

2022-07-29

12 3 4 5 6 7...14

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与JANSF2N7651U8C相关器件

型号	品牌	获取价格	描述	数据表
JANSF2N7652T1	INFINEON	获取价格	Rad hard, 60V, 45A, single, N-channel MOSFET, R9 in a TO-254AA Low Ohmic package - TO-254A
JANSF2N7652U2A	INFINEON	获取价格	Rad hard, 60V, 100A, single, N-Channel MOSFET, R9 in a SupIR-SMD package - SupIR-SMD, 300
JANSF2N7653U2A	INFINEON	获取价格	Rad hard, 100V, 100A, single, N-channel MOSFET, R9 in a SupIR-SMD package - SupIR-SMD, 300
JANSF2N7659D5	INFINEON	获取价格	Rad hard, -60V, -30A, single, P-channel MOSFET, R9 in a TO-257AA Tabless Low Ohmic package
JANSF2N7659T3	INFINEON	获取价格	Rad hard, -60V, -30A, single, P-channel MOSFET, R9 in a TO-257AA Low Ohmic package - TO-25
JANSF2N7660D5	INFINEON	获取价格	Rad hard, -100V, -23A, single, P-channel MOSFET, R9 in a TO-257AA Tabless Low Ohmic packag
JANSF2N7660T3	INFINEON	获取价格	Rad hard, -100V, -23A, single, P-channel MOSFET, R9 in a TO-257AA Tabless Low Ohmic packag
JANSF2N7665U2A	INFINEON	获取价格	Rad hard, -100V, -91A, P-channel MOSFET, R9 in SupIR-SMD package - SupIR-SMD, 300 krad(Si)
JANSG2N2221A	MICROSEMI	获取价格	Small Signal Bipolar Transistor, 0.8A I(C), 50V V(BR)CEO, 1-Element, NPN, Silicon, TO-206A
JANSG2N2221AUA	MICROSEMI	获取价格	Small Signal Bipolar Transistor, 0.8A I(C), 50V V(BR)CEO, 1-Element, NPN, Silicon, CERAMIC

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