Datasheet > JANSF2N7626UBN

JANSF2N7626UBN

更新时间： 2024-11-21 09:36:47

品牌	Logo	应用领域
英飞凌 - INFINEON		/
页数	文件大小	规格书
11页	225K
描述
Small Signal Field-Effect Transistor, 0.53A I(D), 60V, 1-Element, P-Channel, Silicon, Metal-oxide Semiconductor FET, HERMETIC SELALED, UBN-4

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JANSF2N7626UBN 数据手册

PD-94764L

IRHLUB7970Z4

RADIATION HARDENED

LOGIC LEVEL POWER MOSFET

SURFACE MOUNT (UB)

JANSR2N7626UB

60V, P-CHANNEL

REF: MIL-PRF-19500/745

TECHNOLOGY

Product Summary

Part Number

Radiation Level RDS(on)

QPL Part Number

IRHLUB7970Z4 100K Rads (Si) 1.4Ω -0.53A JANSR2N7626UB

IRHLUB7930Z4 300K Rads (Si) 1.4Ω -0.53A JANSF2N7626UB

Refer to Page 11 for 3 Additional Part Numbers -

IRHLUBN7970Z4, IRHLUBC7970Z4, IRHLUBCN7970Z4

(SHIELDED METAL LID)

Features:

5V CMOS and TTL Compatible

Fast Switching

Single Event Effect (SEE) Hardened

Low Total Gate Charge

Simple Drive Requirements

Ease of Paralleling

Hermetically Sealed

Light Weight

Complimentary P-Channel Available -

IRHLUB770Z4, IRHLUBN770Z4

IRHLUBC770Z4 & IRHLUBCN770Z4

International Rectifier’s R7^TMLogic Level Power MOSFETs

provide simple solution to interfacing CMOS and TTL control

circuits to power devices in space and other radiation

environments. The threshold voltage remains within acceptable

operating limits over the full operating temperature and post

radiation. This is achieved while maintaining single event

gate rupture and single event burnout immunity.

These devices are used in applications such as current boost

low signal source in PWM, voltage comparator and operational

amplifiers.

Absolute Maximum Ratings

Pre-Irradiation

Parameter

Units

@ V

= -4.5V, T = 25°C Continuous Drain Current

-0.53

= -4.5V, T = 100°C Continuous Drain Current

-0.33

-2.12

0.57

Pulsed Drain Current

Max. Power Dissipation

Linear Derating Factor

Gate-to-Source Voltage

Single Pulse Avalanche Energy

Avalanche Current

@ T = 25°C

W/°C

0.0045

±10

33.5

-0.53

0.06

Repetitive Avalanche Energy

Peak Diode Recovery dv/dt

Operating Junction

V/ns

dv/dt

-4.4

-55 to 150

°C

Storage Temperature Range

Lead Temperature

STG

300 (for 5s)

43 (Typical)

Weight

For footnotes refer to the last page

www.irf.com

09/15/10

12 3 4 5 6 7...11

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与JANSF2N7626UBN相关器件

型号	品牌	获取价格	描述	数据表
JANSF2N7647D5	INFINEON	获取价格	Rad hard, 60V, 30A, single, N-channel MOSFET, R9 in a TO-257AA Tabless Low Ohmic package -
JANSF2N7647T3	INFINEON	获取价格	Rad hard, 60V, 30A, single, N-channel MOSFET, R9 in a TO-257AA Low Ohmic package - TO-257A
JANSF2N7647U3	INFINEON	获取价格	Rad hard, 60V, 40A, single, N-channel MOSFET, R9 in a SMD-0.5 package - SMD-0.5, 300 krad
JANSF2N7647U3C	INFINEON	获取价格	Rad hard, 60V, 40A, single, N-channel MOSFET, R9 in a SMD-0.5 (ceramic lid) package - SMD-
JANSF2N7648D5	INFINEON	获取价格	Rad hard, 100V, 30A, single, N-channel MOSFET, R9 in a TO-257AA Tabless Low Ohmic package
JANSF2N7648T3	INFINEON	获取价格	Rad hard, 100V, 30A, single, N-channel MOSFET, R9 in a TO-257AA Low Ohmic package - TO-257
JANSF2N7648U3	INFINEON	获取价格	Rad hard, 100V, 35A, single, N-channel MOSFET, R9 in a SMD-0.5 package - SMD-0.5, 300 krad
JANSF2N7648U3C	INFINEON	获取价格	Rad hard, 100V, 22A, single, N-channel MOSFET, R9 in a SMD-0.5 (ceramic lid) package - SMD
JANSF2N7649D5	INFINEON	获取价格	Rad hard, 250V, 17A, single, N-channel MOSFET, R9 in a TO-257AA Low Ohmic package - TO-257
JANSF2N7649T3	INFINEON	获取价格	Rad hard, 250V, 17A, single, N-channel MOSFET, R9 in a TO-257AA Low Ohmic package - TO-257

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