PD-94764L
IRHLUB7970Z4
RADIATION HARDENED
LOGIC LEVEL POWER MOSFET
SURFACE MOUNT (UB)
JANSR2N7626UB
60V, P-CHANNEL
REF: MIL-PRF-19500/745
TECHNOLOGY
Product Summary
Part Number
Radiation Level RDS(on)
ID
QPL Part Number
IRHLUB7970Z4 100K Rads (Si) 1.4Ω -0.53A JANSR2N7626UB
IRHLUB7930Z4 300K Rads (Si) 1.4Ω -0.53A JANSF2N7626UB
UB
Refer to Page 11 for 3 Additional Part Numbers -
IRHLUBN7970Z4, IRHLUBC7970Z4, IRHLUBCN7970Z4
(SHIELDED METAL LID)
Features:
n
n
n
n
n
n
n
n
n
5V CMOS and TTL Compatible
Fast Switching
Single Event Effect (SEE) Hardened
Low Total Gate Charge
Simple Drive Requirements
Ease of Paralleling
Hermetically Sealed
Light Weight
Complimentary P-Channel Available -
IRHLUB770Z4, IRHLUBN770Z4
IRHLUBC770Z4 & IRHLUBCN770Z4
International Rectifier’s R7TM Logic Level Power MOSFETs
provide simple solution to interfacing CMOS and TTL control
circuits to power devices in space and other radiation
environments. The threshold voltage remains within acceptable
operating limits over the full operating temperature and post
radiation. This is achieved while maintaining single event
gate rupture and single event burnout immunity.
These devices are used in applications such as current boost
low signal source in PWM, voltage comparator and operational
amplifiers.
Absolute Maximum Ratings
Pre-Irradiation
Parameter
Units
I
@ V
@ V
= -4.5V, T = 25°C Continuous Drain Current
-0.53
D
D
GS
GS
C
A
I
= -4.5V, T = 100°C Continuous Drain Current
-0.33
-2.12
0.57
C
I
Pulsed Drain Current
Max. Power Dissipation
Linear Derating Factor
Gate-to-Source Voltage
Single Pulse Avalanche Energy
Avalanche Current
DM
@ T = 25°C
P
W
W/°C
V
D
C
0.0045
±10
V
GS
E
33.5
mJ
A
AS
I
-0.53
0.06
AR
E
Repetitive Avalanche Energy
Peak Diode Recovery dv/dt
Operating Junction
mJ
V/ns
AR
dv/dt
-4.4
T
-55 to 150
J
°C
T
Storage Temperature Range
Lead Temperature
STG
300 (for 5s)
43 (Typical)
Weight
mg
For footnotes refer to the last page
www.irf.com
1
09/15/10