Datasheet > JANSF2N7624U3

JANSF2N7624U3

更新时间： 2024-11-06 11:01:15

品牌	Logo	应用领域
英飞凌 - INFINEON		/
页数	文件大小	规格书
9页	218K
描述
Rad hard, -60V, -22A, single, P-channel MOSFET, R7 in a SMD-0.5 package - SMD-0.5, 300 krad(Si) TID, QPL

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JANSF2N7624U3 技术参数

生命周期：	Active	包装说明：	,
Reach Compliance Code：	compliant	风险等级：	5.76
Base Number Matches：	1

JANSF2N7624U3 数据手册

PD-97302C

2N7624U3

IRHLNJ797034

RADIATION HARDENED

LOGIC LEVEL POWER MOSFET

SURFACE MOUNT (SMD-0.5)

60V, P-CHANNEL

TECHNOLOGY

Product Summary

Part Number

IRHLNJ797034

IRHLNJ793034

Radiation Level RDS(on)

100K Rads (Si) 0.072Ω

300K Rads (Si) 0.072Ω

22A*

SMD-0.5

International Rectifier’s R7^TMLogic Level Power MOSFETs

provide simple solution to interfacing CMOS and TTL control

circuits to power devices in space and other radiation

environments.The threshold voltage remains within

acceptable operating limits over the full operating

temperature and post radiation.This is achieved while

maintaining single event gate rupture and single event

burnout immunity.

Features:

5V CMOS and TTL Compatible

Fast Switching

Single Event Effect (SEE) Hardened

Low Total Gate Charge

Simple Drive Requirements

Ease of Paralleling

Hermetically Sealed

Ceramic Package

Surface Mount

The device is ideal when used to interface directly with most

logic gates, linear IC’s, micro-controllers, and other device

types that operate from a 3.3-5V source. It may also be

used to increase the output current of a PWM, voltage

comparator or an operational amplifier where the logic level

drive signal is available.

Light Weight

ESD Rating: Class 1C per MIL-STD-750,

Method 1020

Absolute Maximum Ratings

Pre-Irradiation

Parameter

Units

= -4.5V,T = 25°C Continuous Drain Current

-22*

= -4.5V,T = 100°C Continuous Drain Current

-14.9

-88

Pulsed Drain Current

Max. Power Dissipation

Linear Derating Factor

@ T = 25°C

W/°C

0.45

±10

Gate-to-Source Voltage

Single Pulse Avalanche Energy

Avalanche Current

-22

Repetitive Avalanche Energy

Peak Diode Recovery dv/dt

Operating Junction

5.7

V/ns

dv/dt

-12.3

-55 to 150

°C

Storage Temperature Range

STG

Pckg. Mounting Surface Temp.

Weight

300 (for 5s)

1.0 (Typical)

* Current is limited by package

For footnotes refer to the last page

www.irf.com

03/02/16

12 3 4 5 6 7...9

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与JANSF2N7624U3相关器件

型号	品牌	获取价格	描述	数据表
JANSF2N7625T3	INFINEON	获取价格	Power Field-Effect Transistor,
JANSF2N7626UB	INFINEON	获取价格	Rad hard, -60V, -0.53A, single, P-channel MOSFET, R7 in a UB package - UB, 300 krad(Si) TI
JANSF2N7626UBC	INFINEON	获取价格	Small Signal Field-Effect Transistor, 0.53A I(D), 60V, 1-Element, P-Channel, Silicon, Meta
JANSF2N7626UBCN	INFINEON	获取价格	Small Signal Field-Effect Transistor, 0.53A I(D), 60V, 1-Element, P-Channel, Silicon, Meta
JANSF2N7626UBN	INFINEON	获取价格	Small Signal Field-Effect Transistor, 0.53A I(D), 60V, 1-Element, P-Channel, Silicon, Meta
JANSF2N7647D5	INFINEON	获取价格	Rad hard, 60V, 30A, single, N-channel MOSFET, R9 in a TO-257AA Tabless Low Ohmic package -
JANSF2N7647T3	INFINEON	获取价格	Rad hard, 60V, 30A, single, N-channel MOSFET, R9 in a TO-257AA Low Ohmic package - TO-257A
JANSF2N7647U3	INFINEON	获取价格	Rad hard, 60V, 40A, single, N-channel MOSFET, R9 in a SMD-0.5 package - SMD-0.5, 300 krad
JANSF2N7647U3C	INFINEON	获取价格	Rad hard, 60V, 40A, single, N-channel MOSFET, R9 in a SMD-0.5 (ceramic lid) package - SMD-
JANSF2N7648D5	INFINEON	获取价格	Rad hard, 100V, 30A, single, N-channel MOSFET, R9 in a TO-257AA Tabless Low Ohmic package

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