Datasheet > JANSF2N7591U3C

JANSF2N7591U3C

更新时间： 2024-11-06 14:56:35

品牌	Logo	应用领域
英飞凌 - INFINEON		/
页数	文件大小	规格书
14页	1359K
描述
Rad hard, 200V, 16A, single, N-channel MOSFET, R6 in a SMD-0.5 package - SMD-0.5, 300 krad(Si) TID, QPL, Ceramic Lid

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JANSF2N7591U3C 技术参数

生命周期：	Active	包装说明：	,
Reach Compliance Code：	compliant	风险等级：	5.39
配置：	Single	最大漏极电流 (Abs) (ID)：	16 A
最大漏极电流 (ID)：	16 A	FET 技术：	METAL-OXIDE SEMICONDUCTOR
工作模式：	ENHANCEMENT MODE	最高工作温度：	150 °C
极性/信道类型：	N-CHANNEL	最大功率耗散 (Abs)：	75 W
子类别：	FET General Purpose Power	表面贴装：	YES

JANSF2N7591U3C 数据手册

IRHNJ67230 (JANSR2N7591U3)

PD-96923F

Radiation Hardened Power MOSFET

Surface Mount (SMD-0.5)

200V, 16A, N-channel, R6 Technology

Product Summary

Features



Single event effect (SEE) hardened



Part number: IRHNJ67230 (JANSR2N7591U3),

IRHNJ63230 (JANSF2N7591U3)

REF: MIL-PRF-19500/746

Radiation level: 100 krad(Si),

300 krad(Si)

R_DS(on),max: 130m

I_D: 16A

Low R_DS(on)



Low total gate charge

Simple drive requirements

Hermetically sealed

Ceramic package



Light weight

Surface mount

ESD rating: Class 3A per MIL-STD-750, Method 1020

Potential Applications



DC-DC converter

Motor drives



SMD-0.5

Product Validation

Qualified to JANS screening flow according to MIL-PRF-19500 for space applications

Description

IR HiRel R6 technology provides high performance power MOSFETs for space applications. This technology has

over a decade of proven performance and reliability in satellite applications. These devices have been

characterized for both Total Dose and Single Event Effects (SEE). The combination of low R_DS(on)and low gate

charge reduces the power losses in switching applications such as DC to DC converters and motor control. These

devices retain all of the well established advantages of MOSFETs such as voltage control, fast switching and

temperature stability of electrical parameters.

Ordering Information

Table 1

Part number

IRHNJ67230

Ordering options

Package

Screening Level

COTS

TID Level

SMD-0.5

100 krad(Si)

300 krad(Si)

IRHNJ67230SCV

IRHNJ67230SCS

JANSR2N7591U3

IRHNJ63230

SMD-0.5

JANTXV equivalent

S-Level

JANS

COTS

JANSF2N7591U3

JANS

Please read the Important Notice and Warnings at the end of this document

page 1 of 14

www.infineon.com/irhirel

2021-08-06

12 3 4 5 6 7...14

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与JANSF2N7591U3C相关器件

型号	品牌	获取价格	描述	数据表
JANSF2N7616UB	INFINEON	获取价格	Rad hard, 60V, 0.8A, single, N-channel MOSFET, R7 in a UB package - UB, 300 krad(Si) TID,
JANSF2N7616UBC	INFINEON	获取价格	Rad hard, 60V, 0.8A, single, N-channel MOSFET, R7 in a UBC package - UBC, 300 krad(Si) TID
JANSF2N7616UBCN	INFINEON	获取价格	Rad hard, 60V, 0.8A, single, N-channel MOSFET, R7 in a UBC package - UBCN, 300 krad(Si) TI
JANSF2N7616UBN	INFINEON	获取价格	Rad hard, 60V, 0.8A, single, N-channel MOSFET, R7 in a UB package - UBN, 300 krad(Si) TID,
JANSF2N7624U3	INFINEON	获取价格	Rad hard, -60V, -22A, single, P-channel MOSFET, R7 in a SMD-0.5 package - SMD-0.5, 300 kra
JANSF2N7625T3	INFINEON	获取价格	Power Field-Effect Transistor,
JANSF2N7626UB	INFINEON	获取价格	Rad hard, -60V, -0.53A, single, P-channel MOSFET, R7 in a UB package - UB, 300 krad(Si) TI
JANSF2N7626UBC	INFINEON	获取价格	Small Signal Field-Effect Transistor, 0.53A I(D), 60V, 1-Element, P-Channel, Silicon, Meta
JANSF2N7626UBCN	INFINEON	获取价格	Small Signal Field-Effect Transistor, 0.53A I(D), 60V, 1-Element, P-Channel, Silicon, Meta
JANSF2N7626UBN	INFINEON	获取价格	Small Signal Field-Effect Transistor, 0.53A I(D), 60V, 1-Element, P-Channel, Silicon, Meta

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