5秒后页面跳转
JANSF2N7648U3C PDF预览

JANSF2N7648U3C

更新时间: 2024-11-19 14:56:11
品牌 Logo 应用领域
英飞凌 - INFINEON /
页数 文件大小 规格书
9页 494K
描述
Rad hard, 100V, 22A, single, N-channel MOSFET, R9 in a SMD-0.5 (ceramic lid) package - SMD-0.5, 300 krad TID, QPL

JANSF2N7648U3C 数据手册

 浏览型号JANSF2N7648U3C的Datasheet PDF文件第2页浏览型号JANSF2N7648U3C的Datasheet PDF文件第3页浏览型号JANSF2N7648U3C的Datasheet PDF文件第4页浏览型号JANSF2N7648U3C的Datasheet PDF文件第5页浏览型号JANSF2N7648U3C的Datasheet PDF文件第6页浏览型号JANSF2N7648U3C的Datasheet PDF文件第7页 
PD-97911  
IRHNJC9A7130  
JANSR2N7648U3C  
100V, N-CHANNEL  
RADIATION HARDENED  
POWER MOSFET  
SURFACE MOUNT (SMD-0.5) (Ceramic Lid)  
REF:RMIL-PRF-19500/775  
9TECHNOLOGY  
Product Summary  
Part Number Radiation Level RDS(on)  
QPL Part Number  
ID  
IRHNJC9A7130 100 kRads (Si)  
IRHNJC9A3130 300 kRads (Si)  
35A JANSR2N7648U3C  
35A JANSF2N7648U3C  
34m  
34m  
Description  
Features  
Low RDS(on)  
IR HiRel R9 technology provides superior power MOSFETs  
for space applications. These devices have improved  
immunity to Single Event Effect (SEE) and have been  
characterized for useful performance with Linear Energy  
Transfer (LET) up to 90MeV/(mg/cm2). Their combination of  
low RDS(on) and faster switching times reduces the power  
losses and increases power density in today’s high speed  
switching applications such as DC-DC converters and motor  
controllers. These devices retain all of the well established  
advantages of MOSFETs such as voltage control, fast  
switching, ease of paralleling and temperature stability of  
electrical parameters.  
Fast Switching  
Single Event Effect (SEE) Hardened  
Low Total Gate Charge  
Simple Drive Requirements  
Hermetically Sealed  
Ceramic package  
Light Weight  
Surface Mount  
ESD Rating: Class 2 per MIL-STD-750,  
Method 1020  
Absolute Maximum Ratings  
Pre-Irradiation  
Symbol  
Parameter  
Value  
Units  
ID1 @ VGS = 12V, TC = 25°C  
Continuous Drain Current  
35  
A
ID2 @ VGS = 12V, TC = 100°C  
IDM @TC = 25°C  
Continuous Drain Current  
Pulsed Drain Current  
22  
140  
75  
PD @TC = 25°C  
Maximum Power Dissipation  
W
W/°C  
V
Linear Derating Factor  
Gate-to-Source Voltage  
0.6  
± 20  
605  
35  
VGS  
EAS  
IAR  
Single Pulse Avalanche Energy   
Avalanche Current   
mJ  
A
EAR  
dv/dt  
TJ  
Repetitive Avalanche Energy   
Peak Diode Recovery dv/dt   
Operating Junction and  
7.5  
13  
mJ  
V/ns  
-55 to + 150  
TSTG  
Storage Temperature Range  
Package Mounting Surface Temperature  
Weight  
°C  
g
300 (for 5s)  
1.0 (Typical)  
For Footnotes, refer to the page 2.  
1
2019-01-15  
International Rectifier HiRel Products, Inc.  

与JANSF2N7648U3C相关器件

型号 品牌 获取价格 描述 数据表
JANSF2N7649D5 INFINEON

获取价格

Rad hard, 250V, 17A, single, N-channel MOSFET, R9 in a TO-257AA Low Ohmic package - TO-257
JANSF2N7649T3 INFINEON

获取价格

Rad hard, 250V, 17A, single, N-channel MOSFET, R9 in a TO-257AA Low Ohmic package - TO-257
JANSF2N7649U3 INFINEON

获取价格

Rad hard, 250V, 17A, single, N-channel MOSFET, R9 in a SMD-0.5 package - SMD-0.5, 300 krad
JANSF2N7650U8C INFINEON

获取价格

Rad hard, 60V, 25A, single, N-channel MOSFET, R9 in a SMD-0.2C package - SMD-0.2C, 300 kra
JANSF2N7651U8C INFINEON

获取价格

Rad hard, 100V, 23A, single, N-channel MOSFET, R9 in a SMD-0.2C package - SMD-0.2C, 300 kr
JANSF2N7652T1 INFINEON

获取价格

Rad hard, 60V, 45A, single, N-channel MOSFET, R9 in a TO-254AA Low Ohmic package - TO-254A
JANSF2N7652U2A INFINEON

获取价格

Rad hard, 60V, 100A, single, N-Channel MOSFET, R9 in a SupIR-SMD package - SupIR-SMD, 300
JANSF2N7653U2A INFINEON

获取价格

Rad hard, 100V, 100A, single, N-channel MOSFET, R9 in a SupIR-SMD package - SupIR-SMD, 300
JANSF2N7659D5 INFINEON

获取价格

Rad hard, -60V, -30A, single, P-channel MOSFET, R9 in a TO-257AA Tabless Low Ohmic package
JANSF2N7659T3 INFINEON

获取价格

Rad hard, -60V, -30A, single, P-channel MOSFET, R9 in a TO-257AA Low Ohmic package - TO-25