是否Rohs认证: | 符合 | 生命周期: | Active |
包装说明: | CHIP CARRIER, R-CQCC-N15 | Reach Compliance Code: | compliant |
ECCN代码: | EAR99 | 风险等级: | 5.47 |
雪崩能效等级(Eas): | 156 mJ | 外壳连接: | SOURCE |
配置: | SINGLE WITH BUILT-IN DIODE | 最小漏源击穿电压: | 30 V |
最大漏极电流 (ID): | 12 A | 最大漏源导通电阻: | 0.07 Ω |
FET 技术: | METAL-OXIDE SEMICONDUCTOR | JESD-30 代码: | R-CQCC-N15 |
JESD-609代码: | e0 | 元件数量: | 1 |
端子数量: | 15 | 工作模式: | ENHANCEMENT MODE |
封装主体材料: | CERAMIC, METAL-SEALED COFIRED | 封装形状: | RECTANGULAR |
封装形式: | CHIP CARRIER | 峰值回流温度(摄氏度): | NOT SPECIFIED |
极性/信道类型: | N-CHANNEL | 最大脉冲漏极电流 (IDM): | 48 A |
认证状态: | Qualified | 表面贴装: | YES |
端子面层: | Tin/Lead (Sn/Pb) | 端子形式: | NO LEAD |
端子位置: | QUAD | 处于峰值回流温度下的最长时间: | NOT SPECIFIED |
晶体管应用: | SWITCHING | 晶体管元件材料: | SILICON |
型号 | 品牌 | 获取价格 | 描述 | 数据表 |
JANSF2N7495U5 | INFINEON |
获取价格 |
RADIATION HARDENED POWER MOSFET SURFACE MOUNT (LCC-18) | |
JANSF2N7503U8 | INFINEON |
获取价格 |
Rad hard, 100V, 6.9A, single, N-channel MOSFET, R5 in a SMD-0.2 package - SMD-0.2, 300 kra | |
JANSF2N7503U8C | INFINEON |
获取价格 |
Power Field-Effect Transistor, 6.9A I(D), 100V, 0.22ohm, 1-Element, N-Channel, Silicon, Me | |
JANSF2N7506U8 | INFINEON |
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Rad hard, -100V, -3.1A, single, P-channel MOSFET, R5 in a SMD-0.2 package | |
JANSF2N7506U8C | INFINEON |
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Rad hard, -100V, -3.1A, single, P-channel MOSFET, R5 in a SMD-0.2 package | |
JANSF2N7519U3 | INFINEON |
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Rad hard, -30V, -22A, single, P-channel MOSFET, R5 in a SMD-0.5 package - SMD-0.5, 300 kra | |
JANSF2N7520T3 | INFINEON |
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Rad hard, -60V, -20A, single, P-channel MOSFET, R5 in a TO-257AA Low Ohmic package - TO-25 | |
JANSF2N7520U3 | INFINEON |
获取价格 |
Rad hard, -60V, -22A, single, P-channel MOSFET, R5 in a SMD-0.5 package - SMD-0.5, 300 kra | |
JANSF2N7520U3C | INFINEON |
获取价格 |
Rad hard, -60V, -20A, single, P-channel MOSFET, R5 in a TO-257AA Low Ohmic package - TO-25 | |
JANSF2N7524D4 | INFINEON |
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Rad hard, -60V, -45A, single, P-channel MOSFET, R5 in a TO-254AA Tabless Low Ohmic package |