PD-95816E
IRHNJ67130
JANSR2N7587U3
100V, N-CHANNEL
RADIATION HARDENED
POWER MOSFET
SURFACE MOUNT (SMD-0.5)
REF: MIL-PRF-19500/746
TECHNOLOGY
R
6
Product Summary
Part Number
IRHNJ67130
IRHNJ63130
Radiation Level RDS(on)
ID
QPL Part Number
JANSR2N7587U3
JANSF2N7587U3
100 kRads(Si)
300 kRads(Si)
22A*
22A*
0.042
0.042
SMD-0.5
Description
Features
Low RDS(on)
IR HiRel R6 technology provides high performance power
MOSFETs for space applications. These devices have
improved immunity to Single Event Effect (SEE) and have
been characterized for useful performance with Linear Energy
Transfer (LET) up to 90MeV/(mg/cm2). Their combination of
very low RDS(on) and faster switching times reduces power
loss and increases power density in today’s high speed
switching applications such as DC-DC converters and motor
controllers. These devices retain all of the well established
advantages of MOSFETs such as voltage control, ease of
paralleling and temperature stability of electrical parameters.
Fast Switching
Single Event Effect (SEE) Hardened
Low Total Gate Charge
Simple Drive Requirements
Hermetically Sealed
Ceramic Package
Surface Mount
ESD Rating: Class 1C per MIL-STD-750,
Method 1020
Absolute Maximum Ratings
Pre-Irradiation
Symbol
Value
Parameter
Units
ID1 @ VGS = 12V, TC = 25°C Continuous Drain Current
ID2 @ VGS = 12V, TC = 100°C Continuous Drain Current
22*
A
19
88
IDM @ TC = 25°C
PD @TC = 25°C
Pulsed Drain Current
W
W/°C
V
Maximum Power Dissipation
75
Linear Derating Factor
Gate-to-Source Voltage
Single Pulse Avalanche Energy
Avalanche Current
0.6
±20
73
VGS
EAS
IAR
mJ
A
22
mJ
EAR
dv/dt
TJ
7.5
3.8
Repetitive Avalanche Energy
Peak Diode Recovery dv/dt
Operating Junction and
Storage Temperature Range
Lead Temperature
V/ns
-55 to + 150
TSTG
°C
g
300 (for 5s)
1.0 (Typical)
Weight
* Current is limited by package
For Footnotes, refer to the page 2.
1
2019-12-10
International Rectifier HiRel Products, Inc.