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JANSF2N7579U2

更新时间： 2024-11-21 11:01:15
品牌 Logo 应用领域
英飞凌 - INFINEON /
页数 文件大小 规格书
9页 188K
描述
Rad hard, 100V, 56A, single, N-channel MOSFET, R6 in a SMD-2 package - SMD-2, 300 krad(Si) TID, QPL

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JANSF2N7579U2 数据手册

 浏览型号JANSF2N7579U2的Datasheet PDF文件第2页浏览型号JANSF2N7579U2的Datasheet PDF文件第3页浏览型号JANSF2N7579U2的Datasheet PDF文件第4页浏览型号JANSF2N7579U2的Datasheet PDF文件第5页浏览型号JANSF2N7579U2的Datasheet PDF文件第6页浏览型号JANSF2N7579U2的Datasheet PDF文件第7页 
PD-94299C  
2N7579U2  
RADIATION HARDENED  
POWER MOSFET  
SURFACE MOUNT (SMD-2)  
IRHNA67160  
100V, N-CHANNEL  
TECHNOLOGY  
Product Summary  
Part Number  
IRHNA67160  
IRHNA63160  
Radiation Level RDS(on)  
ID  
100K Rads (Si)  
300K Rads (Si)  
0.010Ω 56A*  
0.010Ω 56A*  
SMD-2  
International Rectifier’s R6TM technology provides  
superior power MOSFETs for space applications.  
These devices have improved immunity to Single  
Event Effect (SEE) and have been characterized for  
useful performance with Linear Energy Transfer (LET)  
up to 90MeV/(mg/cm2). Their combination of very low  
Features:  
n
n
n
n
n
n
n
n
n
n
Low RDS(on)  
Fast Switching  
Single Event Effect (SEE) Hardened  
Low Total Gate Charge  
Simple Drive Requirements  
Ease of Paralleling  
Hermetically Sealed  
Surface Mount  
R
and faster switching times reduces power  
DS(on)  
loss and increases power density in today’s high  
speed switching applications such as DC-DC  
converters and motor controllers. These devices  
retain all of the well established advantages of  
MOSFETs such as voltage control, ease of paralleling  
and temperature stability of electrical parameters.  
Ceramic Package  
Light Weight  
Absolute Maximum Ratings  
Pre-Irradiation  
Parameter  
Units  
I
@V  
@V  
= 12V,T = 25°C  
Continuous Drain Current  
56*  
56*  
D
D
GS  
GS  
C
A
I
= 12V,T = 100°C Continuous Drain Current  
C
I
Pulsed Drain Current À  
Max. Power Dissipation  
Linear Derating Factor  
Gate-to-Source Voltage  
Single Pulse Avalanche Energy Á  
Avalanche Current À  
224  
DM  
@ T = 25°C  
P
D
250  
W
W/°C  
V
C
2.0  
V
±20  
GS  
E
462  
mJ  
A
AS  
I
56  
AR  
E
Repetitive Avalanche Energy À  
Peak Diode Recovery dv/dt   
Operating Junction  
25  
mJ  
V/ns  
AR  
dv/dt  
5.0  
T
-55 to 150  
J
°C  
g
T
Storage Temperature Range  
Pckg. Mounting Surface Temp.  
Weight  
STG  
300 (for 5s)  
3.3 (Typical)  
* Current is limited by package  
For footnotes refer to the last page  
www.irf.com  
1
12/21/11  
1234567...9

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 		Rad hard, 100V, 22A, single, N-channel MOSFET, R6 in a SMD-0.5 package - SMD-0.5, 300 krad
JANSF2N7587U3C INFINEON

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 		Rad hard, 100V, 22A, single, N-channel MOSFET, R6 in a SMD-0.5 package - SMD-0.5, 300 krad
JANSF2N7589U3 INFINEON

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 		Rad hard, 150V, 19A, single, N-channel MOSFET, R6 in a SMD-0.5 package - SMD-0.5, 300 krad
JANSF2N7589U3C INFINEON

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