Datasheet > JANSF2N7546U3

JANSF2N7546U3

更新时间： 2024-09-16 11:12:15

品牌	Logo	应用领域
英飞凌 - INFINEON		/
页数	文件大小	规格书
8页	337K
描述
Rad hard, -200V, -8.0A, single, P-channel MOSFET, R5 in a SMD-0.5 package - SMD-0.5, 300 krad(Si) TID, QPL

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JANSF2N7546U3 数据手册

PD-94046G

IRHNJ597230

JANSR2N7546U3

200V, P-CHANNEL

REF: MIL-PRF-19500/712

RADIATION HARDENED

POWER MOSFET

TECHNOLOGY

SURFACE MOUNT (SMD-0.5)

Product Summary

Part Number

IRHNJ597230

IRHNJ593230

Radiation Level RDS(on)

I_D

QPL Part Number

JANSR2N7546U3

JANSF2N7546U3

100 kRads(Si)

300 kRads(Si)

-8.0A

0.505

SMD-0.5

Description

Features

 Single Event Effect (SEE) Hardened

 Low RDS(on)

 Low Total Gate Charge

 Simple Drive Requirements

 Hermetically Sealed

 Electrically Isolated

 Ceramic Package

IR HiRel R5 technology provides high performance

power MOSFETs for space applications. These devices

have been characterized for both Total Dose and Single

Event Effect (SEE) with useful performance up to LET of

80 (MeV/(mg/cm²). The combination of low RDS(on) and

low gate charge reduces the power losses in switching

applications such as DC-DC converters and motor

controllers. These devices retain all of the well

established advantages of MOSFETs such as voltage

control, fast switching and temperature stability of

electrical parameters.

 Light Weight

 Surface Mount

 ESD Rating: Class 1C per MIL-STD-750,

Method 1020

Absolute Maximum Ratings

Pre-Irradiation

Symbol

Value

Units

Parameter

-8.0

I_D1@ V_GS= -12V, T_C= 25°C

Continuous Drain Current

-5.0

-32

I_D2@ V_GS= -12V, T_C= 100°C Continuous Drain Current

I_DM@ T_C= 25°C

P_D@ T_C= 25°C

Pulsed Drain Current 

W/°C

Maximum Power Dissipation

0.6

Linear Derating Factor

± 20

V_GS

E_AS

I_AR

Gate-to-Source Voltage

Single Pulse Avalanche Energy 

Avalanche Current 

-8.0

7.5

V/ns

E_AR

dv/dt

T_J

Repetitive Avalanche Energy 

Peak Diode Recovery dv/dt 

Operating Junction and

-13.7

-55 to + 150

T_STG

Storage Temperature Range

Package Mounting Surface Temperature

Weight

°C

300 (for 5s)

1.0 (Typical)

For Footnotes, refer to the page 2.

2018-12-18

International Rectifier HiRel Products, Inc.

12 3 4 5 6 7 8

中文翻译

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与JANSF2N7546U3相关器件

型号	品牌	获取价格	描述	数据表
JANSF2N7549T1	INFINEON	获取价格	Rad hard, -200V, -32A, single, P-channel MOSFET, R5 in a TO-254AA Low Ohmic package - TO-2
JANSF2N7549U2	INFINEON	获取价格	Rad hard, -200V, -35.5A, single, P-channel MOSFET, R5 in a SMD-2 package - SMD-2, 300 krad
JANSF2N7550D1	INFINEON	获取价格	Rad hard, -100V, -45A, single, P-channel MOSFET, R5 in a TO-254AA Tabless SMD package - TO
JANSF2N7550U2	INFINEON	获取价格	Rad hard, -100V, -47A, single, P-channel MOSFET, R5 in a SMD-2 package - SMD-2, 300 krad(S
JANSF2N7579U2	INFINEON	获取价格	Rad hard, 100V, 56A, single, N-channel MOSFET, R6 in a SMD-2 package - SMD-2, 300 krad(Si)
JANSF2N7579U2A	INFINEON	获取价格	Rad hard, 100V, 56A, single, N-channel MOSFET, R6 in a SupIR-SMD package - SupIR-SMD, 300
JANSF2N7580T1	INFINEON	获取价格	Rad hard, 100V, 45A, single, N-channel MOSFET, R6 in a TO-254AA Low Ohmic package - TO-254
JANSF2N7583U2A	INFINEON	获取价格	Rad hard, 200V, 56A, single, N-channel MOSFET, R6 in a SupIR-SMD package - SupIR-SMD, 300
JANSF2N7584T1	INFINEON	获取价格	Rad hard, 200V, 45A, single, N-channel MOSFET, R6 in a TO-254AA Low Ohmic package - TO-254
JANSF2N7585U2A	INFINEON	获取价格	Rad hard, 250V, 50A, single, N-channel MOSFET, R6 in a SupIR-SMD package - SupIR-SMD, 300

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