PD-96931C
IRHNJ67134
RADIATION HARDENED
POWER MOSFET
JANSR2N7589U3
150V, N-CHANNEL
SURFACE MOUNT (SMD-0.5)
REF: MIL-PRF-19500/746
TECHNOLOGY
Product Summary
Part Number Radiation Level RDS(on) ID
QPL Part Number
IRHNJ67134 100K Rads (Si)
IRHNJ63134 300K Rads (Si)
0.088Ω 19A
0.088Ω 19A
JANSR2N7589U3
JANSF2N7589U3
SMD-0.5
International Rectifier’s R6TM technology provides
superior power MOSFETs for space applications.
These devices have improved immunity to Single
Event Effect (SEE) and have been characterized for
useful performance with Linear Energy Transfer
(LET) up to 90MeV/(mg/cm2). Their combination of
Features:
n
n
n
n
n
n
n
n
n
n
Low RDS(on)
Fast Switching
Single Event Effect (SEE) Hardened
Low Total Gate Charge
Simple Drive Requirements
Ease of Paralleling
Hermetically Sealed
Surface Mount
very low R
and faster switching times reduces
DS(on)
power loss and increases power density in today’s
high speed switching applications such as DC-DC
converters and motor controllers. These devices
retain all of the well established advantages of
MOSFETs such as voltage control, ease of paralleling
and temperature stability of electrical parameters.
Ceramic Package
Light Weight
n
ESD Rating: Class 2 per MIL-STD-750,
Method 1020
Pre-Irradiation
Absolute Maximum Ratings
Parameter
Units
I
@ V
@ V
= 12V, T = 25°C Continuous Drain Current
19
12
D
D
GS
GS
C
A
I
= 12V, T = 100°C Continuous Drain Current
C
I
Pulsed Drain Current À
Max. Power Dissipation
Linear Derating Factor
76
DM
@ T = 25°C
P
D
75
W
W/°C
V
C
0.6
V
Gate-to-Source Voltage
Single Pulse Avalanche Energy Á
Avalanche Current À
±20
60
GS
E
mJ
A
AS
I
19
AR
E
Repetitive Avalanche Energy À
Peak Diode Recovery dv/dt Â
Operating Junction
7.5
mJ
V/ns
AR
dv/dt
8.6
T
-55 to 150
J
°C
g
T
Storage Temperature Range
STG
Pckg. Mounting Surface Temp.
Weight
300 (for 5s)
1.0 (Typical)
For footnotes refer to the last page
www.irf.com
1
08/20/13