Datasheet > JANSF2N7524U2

JANSF2N7524U2

更新时间： 2024-11-25 11:01:15

品牌	Logo	应用领域
英飞凌 - INFINEON		/
页数	文件大小	规格书
8页	382K
描述
Rad hard, -60V, -56A, single, P-channel MOSFET, R5 in a SMD-2 package - SMD-2, 300 krad(Si) TID, QPL

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JANSF2N7524U2 技术参数

生命周期：	Active	包装说明：	,
Reach Compliance Code：	compliant	风险等级：	5.66

JANSF2N7524U2 数据手册

PD-94604D

IRHNA597064

JANSR2N7524U2

60V, P-CHANNEL

REF: MIL-PRF-19500/733

RADIATION HARDENED

POWER MOSFET

TECHNOLOGY

SURFACE MOUNT (SMD-2)

Product Summary

Part Number

IRHNA597064

IRHNA593064

Radiation Level RDS(on)

I_D

QPL Part Number

JANSR2N7524U2

JANSF2N7524U2

100 kRads(Si)

300 kRads(Si)

-56A

0.016

SMD-2

Description

Features

 Single Event Effect (SEE) Hardened

 Low RDS(on)

 Low Total Gate Charge

 Simple Drive Requirements

 Ease of Paralleling

 Hermetically Sealed

 Electrically Isolated

 Ceramic Package

IR HiRel R5 technology provides high performance

power MOSFETs for space applications. These devices

have been characterized for both Total Dose and Single

Event Effect (SEE) with useful performance up to LET of

80 (MeV/(mg/cm²). The combination of low RDS(on) and

low gate charge reduces the power losses in switching

applications such as DC-DC converters and motor

controllers.

These devices retain all of the well

established advantages of MOSFETs such as voltage

control, fast switching, ease of paralleling and

temperature stability of electrical parameters.

 Light Weight

 Surface Mount

 ESD Rating: Class 3A per MIL-STD-750,

Method 1020

Absolute Maximum Ratings

Parameter

Pre-Irradiation

Units

-56*

I_D@ V_GS= -12V, T_C= 25°C Continuous Drain Current

I_D@ V_GS= -12V, T_C= 100°C Continuous Drain Current

-56*

-224

250

2.0

I_DM

Pulsed Drain Current 

W/°C

P_D@T_C= 25°C

Maximum Power Dissipation

Linear Derating Factor

Gate-to-Source Voltage

Single Pulse Avalanche Energy 

Avalanche Current 

± 20

725

V_GS

E_AS

I_AR

-56

V/ns

E_AR

dv/dt

T_J

Repetitive Avalanche Energy 

Peak Diode Recovery dv/dt 

Operating Junction and

Storage Temperature Range

Lead Temperature

-2.1

-55 to + 150

T_STG

°C

300 (for 5s)

3.3 (Typical)

Weight

* Current is limited by package

For Footnotes, refer to the page 2.

2017-03-08

12 3 4 5 6 7 8

中文翻译

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与JANSF2N7524U2相关器件

型号	品牌	获取价格	描述	数据表
JANSF2N7524U2A	INFINEON	获取价格	Rad hard, -60V, 56A, single, P-channel MOSFET, R5 in a SupIR-SMD package - SupIR-SMD, 300
JANSF2N7545U3	INFINEON	获取价格	Rad hard, -100V, -12.5A, single, P-channel MOSFET, R5 in a SMD-0.5 package - SMD-0.5, 300
JANSF2N7546U3	INFINEON	获取价格	Rad hard, -200V, -8.0A, single, P-channel MOSFET, R5 in a SMD-0.5 package - SMD-0.5, 300 k
JANSF2N7549T1	INFINEON	获取价格	Rad hard, -200V, -32A, single, P-channel MOSFET, R5 in a TO-254AA Low Ohmic package - TO-2
JANSF2N7549U2	INFINEON	获取价格	Rad hard, -200V, -35.5A, single, P-channel MOSFET, R5 in a SMD-2 package - SMD-2, 300 krad
JANSF2N7550D1	INFINEON	获取价格	Rad hard, -100V, -45A, single, P-channel MOSFET, R5 in a TO-254AA Tabless SMD package - TO
JANSF2N7550U2	INFINEON	获取价格	Rad hard, -100V, -47A, single, P-channel MOSFET, R5 in a SMD-2 package - SMD-2, 300 krad(S
JANSF2N7579U2	INFINEON	获取价格	Rad hard, 100V, 56A, single, N-channel MOSFET, R6 in a SMD-2 package - SMD-2, 300 krad(Si)
JANSF2N7579U2A	INFINEON	获取价格	Rad hard, 100V, 56A, single, N-channel MOSFET, R6 in a SupIR-SMD package - SupIR-SMD, 300
JANSF2N7580T1	INFINEON	获取价格	Rad hard, 100V, 45A, single, N-channel MOSFET, R6 in a TO-254AA Low Ohmic package - TO-254

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