Datasheet > JANSF2N7503U8C

JANSF2N7503U8C

更新时间： 2024-09-15 08:56:43

品牌	Logo	应用领域
英飞凌 - INFINEON		/
页数	文件大小	规格书
10页	213K
描述
Power Field-Effect Transistor, 6.9A I(D), 100V, 0.22ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, HERMETIC SEALED, CERAMIC, SMD-0.2, 3 PIN

阅读下载

中文翻译

获取价格

数据手册

如果您发现信息不准确，欢迎纠错

JANSF2N7503U8C 数据手册

ꢁ

PD-97192C

IRHNM57110

JANSR2N7503U8

100V, N-CHANNEL

REF: MIL-PRF-19500/743

TECHNOLOGY

RADIATION HARDENED

POWER MOSFET

SURFACE MOUNT (SMD-0.2)

Product Summary

Part Number

IRHNM57110

IRHNM53110

Radiation Level RDS(on)

100K Rads (Si) 0.22Ω 6.9A JANSR2N7503U8

300K Rads (Si) 0.22Ω 6.9A JANSF2N7503U8

QPL Part Number

SMD-0.2

(METAL LID)

Refer to Page 10 for 1 Additional Part Number -

IRHNMC57110 (Ceramic Lid)

International Rectifier’s R5^TMtechnology provides high

performance power MOSFETs for space applications. These

devices have been characterized for Single Event Effects

(SEE) with useful performance up to an LET of 80 (MeV/

(mg/cm²)). The combination of low RDS(on) and low gate

charge reduces the power losses in switching applications

such as DC to DC converters and motor control. These

devices retain all of the well established advantages of

MOSFETs such as voltage control, fast switching, ease of

paralleling and temperature stability of electrical parameters.

Features:

Single Event Effect (SEE) Hardened

Low RDS(on)

Low Total Gate Charge

Simple Drive Requirements

Ease of Paralleling

Hermetically Sealed

Surface Mount

Ceramic Package

Light Weight

Complimentary P-Channel Available -

IRHNM597110, IRHNMC597110

Absolute Maximum Ratings

Pre-Irradiation

Parameter

Units

@ V

= 12V, T = 25°C Continuous Drain Current

6.9

= 12V, T = 100°C Continuous Drain Current

4.4

27.6

Pulsed Drain Current

Max. Power Dissipation

Linear Derating Factor

Gate-to-Source Voltage

Single Pulse Avalanche Energy

Avalanche Current

@ T = 25°C

W/°C

0.18

±20

6.9

Repetitive Avalanche Energy

Peak Diode Recovery dv/dt

Operating Junction

2.3

V/ns

dv/dt

11.5

-55 to 150

°C

Storage Temperature Range

Lead Temperature

STG

300 (for 5s)

Weight

0.25 (Typical)

For footnotes refer to the last page

www.irf.com

02/06/12

12 3 4 5 6 7...10

中文翻译

下载PDF

与JANSF2N7503U8C相关器件

型号	品牌	获取价格	描述	数据表
JANSF2N7506U8	INFINEON	获取价格	Rad hard, -100V, -3.1A, single, P-channel MOSFET, R5 in a SMD-0.2 package
JANSF2N7506U8C	INFINEON	获取价格	Rad hard, -100V, -3.1A, single, P-channel MOSFET, R5 in a SMD-0.2 package
JANSF2N7519U3	INFINEON	获取价格	Rad hard, -30V, -22A, single, P-channel MOSFET, R5 in a SMD-0.5 package - SMD-0.5, 300 kra
JANSF2N7520T3	INFINEON	获取价格	Rad hard, -60V, -20A, single, P-channel MOSFET, R5 in a TO-257AA Low Ohmic package - TO-25
JANSF2N7520U3	INFINEON	获取价格	Rad hard, -60V, -22A, single, P-channel MOSFET, R5 in a SMD-0.5 package - SMD-0.5, 300 kra
JANSF2N7520U3C	INFINEON	获取价格	Rad hard, -60V, -20A, single, P-channel MOSFET, R5 in a TO-257AA Low Ohmic package - TO-25
JANSF2N7524D4	INFINEON	获取价格	Rad hard, -60V, -45A, single, P-channel MOSFET, R5 in a TO-254AA Tabless Low Ohmic package
JANSF2N7524T1	INFINEON	获取价格	Rad hard, -60V, -45A, single, P-channel MOSFET, R5 in a TO-254AA Low Ohmic package - TO-25
JANSF2N7524U2	INFINEON	获取价格	Rad hard, -60V, -56A, single, P-channel MOSFET, R5 in a SMD-2 package - SMD-2, 300 krad(Si
JANSF2N7524U2A	INFINEON	获取价格	Rad hard, -60V, 56A, single, P-channel MOSFET, R5 in a SupIR-SMD package - SupIR-SMD, 300

与JANSF2N7503U8C相关文章

摩尔斯微电子在美国约书亚树国家公园测试 Wi-Fi HaLow
2024-09-18

1
贸泽上架Tallysman TW5386智能GNSS天线
2024-09-18

1
SL74HC10N：高性能三输入与非门解析
2024-09-03

81
AIC1781A 电池充电控制器深度解析
2024-09-03

72

产品中心

服务支持

精选活动

关于我们

帮助中心

JANSF2N7503U8C

JANSF2N7503U8C 数据手册

与JANSF2N7503U8C相关器件

与JANSF2N7503U8C相关文章

您还可以找

产品中心

服务支持

精选活动

关于我们

帮助中心

JANSF2N7503U8C

JANSF2N7503U8C 数据手册

与JANSF2N7503U8C相关器件

与JANSF2N7503U8C相关文章

您还可以找

您在本页遇到什么问题？