Datasheet > JANSF2N7549U2

JANSF2N7549U2

更新时间： 2024-11-21 14:56:11

品牌	Logo	应用领域
英飞凌 - INFINEON		/
页数	文件大小	规格书
8页	341K
描述
Rad hard, -200V, -35.5A, single, P-channel MOSFET, R5 in a SMD-2 package - SMD-2, 300 krad(Si) TID, QPL

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JANSF2N7549U2 技术参数

生命周期：	Active	包装说明：	,
Reach Compliance Code：	compliant	风险等级：	5.76

JANSF2N7549U2 数据手册

PD-94168E

IRHNA597260

JANSR2N7549U2

200V, P-CHANNEL

REF: MIL-PRF-19500/713

RADIATION HARDENED

POWER MOSFET

TECHNOLOGY

SURFACE MOUNT (SMD-2)

Product Summary

Part Number

IRHNA597260

IRHNA593260

Radiation Level RDS(on)

I_D

QPL Part Number

JANSR2N7549U2

JANSF2N7549U2

100 kRads(Si)

300 kRads(Si)

-33.5A

0.102

SMD-2

Description

Features

 Single Event Effect (SEE) Hardened

 Low RDS(on)

 Low Total Gate Charge

 Simple Drive Requirements

 Ease of Paralleling

 Hermetically Sealed

 Electrically Isolated

 Ceramic Package

IRHNA597260 is part of the International Rectifier HiRel

family of products. IR HiRel R5 technology provides high

performance power MOSFETs for space applications.

These devices have been characterized for both Total

Dose and Single Event Effect (SEE) with useful

performance up to LET of 80 (MeV/(mg/cm²). The

combination of low RDS(on) and low gate charge reduces

the power losses in switching applications such as DC-DC

converters and motor controllers. These devices retain all

of the well established advantages of MOSFETs such as

voltage control, fast switching, ease of paralleling and

temperature stability of electrical parameters.

 Light Weight

 Surface Mount

 ESD Rating: Class 3A per MIL-STD-750,

Method 1020

Absolute Maximum Ratings

Parameter

Pre-Irradiation

Units

-33.5

I_D@ V_GS= -12V, T_C= 25°C Continuous Drain Current

I_D@ V_GS= -12V, T_C= 100°C Continuous Drain Current

-21

-134

250

2.0

I_DM

Pulsed Drain Current 

W/°C

P_D@T_C= 25°C

Maximum Power Dissipation

Linear Derating Factor

Gate-to-Source Voltage

Single Pulse Avalanche Energy 

Avalanche Current 

± 20

303

V_GS

E_AS

I_AR

-33.5

V/ns

E_AR

dv/dt

T_J

Repetitive Avalanche Energy 

Peak Diode Recovery dv/dt 

Operating Junction and

Storage Temperature Range

Lead Temperature

-10

-55 to + 150

T_STG

°C

300 (for 5s)

3.3 (Typical)

Weight

For Footnotes, refer to the page 2.

2017-12-21

International Rectifier HiRel Products, Inc.

12 3 4 5 6 7 8

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与JANSF2N7549U2相关器件

型号	品牌	获取价格	描述	数据表
JANSF2N7550D1	INFINEON	获取价格	Rad hard, -100V, -45A, single, P-channel MOSFET, R5 in a TO-254AA Tabless SMD package - TO
JANSF2N7550U2	INFINEON	获取价格	Rad hard, -100V, -47A, single, P-channel MOSFET, R5 in a SMD-2 package - SMD-2, 300 krad(S
JANSF2N7579U2	INFINEON	获取价格	Rad hard, 100V, 56A, single, N-channel MOSFET, R6 in a SMD-2 package - SMD-2, 300 krad(Si)
JANSF2N7579U2A	INFINEON	获取价格	Rad hard, 100V, 56A, single, N-channel MOSFET, R6 in a SupIR-SMD package - SupIR-SMD, 300
JANSF2N7580T1	INFINEON	获取价格	Rad hard, 100V, 45A, single, N-channel MOSFET, R6 in a TO-254AA Low Ohmic package - TO-254
JANSF2N7583U2A	INFINEON	获取价格	Rad hard, 200V, 56A, single, N-channel MOSFET, R6 in a SupIR-SMD package - SupIR-SMD, 300
JANSF2N7584T1	INFINEON	获取价格	Rad hard, 200V, 45A, single, N-channel MOSFET, R6 in a TO-254AA Low Ohmic package - TO-254
JANSF2N7585U2A	INFINEON	获取价格	Rad hard, 250V, 50A, single, N-channel MOSFET, R6 in a SupIR-SMD package - SupIR-SMD, 300
JANSF2N7586T1	INFINEON	获取价格	Rad hard, 250V, 45A, single, N-channel MOSFET, R6 in a TO-254AA Low Ohmic package - TO-254
JANSF2N7587U3	INFINEON	获取价格	Rad hard, 100V, 22A, single, N-channel MOSFET, R6 in a SMD-0.5 package - SMD-0.5, 300 krad

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