Datasheet > JANSF2N7520T3

JANSF2N7520T3

更新时间： 2024-11-21 14:56:35

品牌	Logo	应用领域
英飞凌 - INFINEON		/
页数	文件大小	规格书
8页	394K
描述
Rad hard, -60V, -20A, single, P-channel MOSFET, R5 in a TO-257AA Low Ohmic package - TO-257AA Low Ohmic, 300 krad(Si) TID, QPL

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JANSF2N7520T3 技术参数

是否Rohs认证：	不符合	生命周期：	Active
Reach Compliance Code：	unknown	ECCN代码：	EAR99
风险等级：	5.33	峰值回流温度（摄氏度）：	NOT SPECIFIED
认证状态：	Qualified	处于峰值回流温度下的最长时间：	NOT SPECIFIED
Base Number Matches：	1

JANSF2N7520T3 数据手册

PD-96911B

IRHYS597034CM

JANSR2N7520T3

60V, P-CHANNEL

REF: MIL-PRF-19500/732

RADIATION HARDENED

POWER MOSFET

TECHNOLOGY

THRU-HOLE (Low-Ohmic TO-257AA)

Product Summary

Part Number

IRHYS597034CM

IRHYS593034CM

Radiation Level RDS(on)

I_D

QPL Part Number

100 kRads(Si)

300 kRads(Si)

-20A JANSR2N7520T3

-20A JANSF2N7520T3

0.087

Low-Ohmic

TO-257AA

Description

Features

 Single Event Effect (SEE) Hardened

 Fast Switching

IR HiRel R5 technology provides high performance

power MOSFETs for space applications. These devices

have been characterized for both Total Dose and Single

Event Effect (SEE) with useful performance up to LET of

80 (MeV/(mg/cm²). The combination of low RDS(on) and

low gate charge reduces the power losses in switching

applications such as DC-DC converters and motor

 Low RDS(on)

 Low Total Gate Charge

 Simple Drive Requirements

 Ease of Paralleling

 Hermetically Sealed

 Electrically Isolated

 Ceramic Eyelets

controllers.

These devices retain all of the well

established advantages of MOSFETs such as voltage

control, fast switching, ease of paralleling and

temperature stability of electrical parameters.

 Light Weight

 ESD Rating: Class 1C per MIL-STD-750,

Method 1020

Absolute Maximum Ratings

Parameter

Pre-Irradiation

Units

-20

I_D@ V_GS= -12V, T_C= 25°C Continuous Drain Current

I_D@ V_GS= -12V, T_C= 100°C Continuous Drain Current

-13

-80

I_DM

Pulsed Drain Current 

W/°C

P_D@T_C= 25°C

Maximum Power Dissipation

0.6

Linear Derating Factor

Gate-to-Source Voltage

Single Pulse Avalanche Energy 

Avalanche Current 

± 20

134

V_GS

E_AS

I_AR

-20

7.5

V/ns

E_AR

dv/dt

T_J

Repetitive Avalanche Energy 

Peak Diode Recovery dv/dt 

Operating Junction and

Storage Temperature Range

Lead Temperature

-4.9

-55 to + 150

T_STG

°C

300 (0.063 in./1.6 mm from case for 10s)

4.3 (Typical)

Weight

For Footnotes, refer to the page 2.

2017-04-28

12 3 4 5 6 7 8

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与JANSF2N7520T3相关器件

型号	品牌	获取价格	描述	数据表
JANSF2N7520U3	INFINEON	获取价格	Rad hard, -60V, -22A, single, P-channel MOSFET, R5 in a SMD-0.5 package - SMD-0.5, 300 kra
JANSF2N7520U3C	INFINEON	获取价格	Rad hard, -60V, -20A, single, P-channel MOSFET, R5 in a TO-257AA Low Ohmic package - TO-25
JANSF2N7524D4	INFINEON	获取价格	Rad hard, -60V, -45A, single, P-channel MOSFET, R5 in a TO-254AA Tabless Low Ohmic package
JANSF2N7524T1	INFINEON	获取价格	Rad hard, -60V, -45A, single, P-channel MOSFET, R5 in a TO-254AA Low Ohmic package - TO-25
JANSF2N7524U2	INFINEON	获取价格	Rad hard, -60V, -56A, single, P-channel MOSFET, R5 in a SMD-2 package - SMD-2, 300 krad(Si
JANSF2N7524U2A	INFINEON	获取价格	Rad hard, -60V, 56A, single, P-channel MOSFET, R5 in a SupIR-SMD package - SupIR-SMD, 300
JANSF2N7545U3	INFINEON	获取价格	Rad hard, -100V, -12.5A, single, P-channel MOSFET, R5 in a SMD-0.5 package - SMD-0.5, 300
JANSF2N7546U3	INFINEON	获取价格	Rad hard, -200V, -8.0A, single, P-channel MOSFET, R5 in a SMD-0.5 package - SMD-0.5, 300 k
JANSF2N7549T1	INFINEON	获取价格	Rad hard, -200V, -32A, single, P-channel MOSFET, R5 in a TO-254AA Low Ohmic package - TO-2
JANSF2N7549U2	INFINEON	获取价格	Rad hard, -200V, -35.5A, single, P-channel MOSFET, R5 in a SMD-2 package - SMD-2, 300 krad

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