是否Rohs认证: | 符合 | 生命周期: | Active |
包装说明: | HERMETIC SEALED, CERAMIC, SMD-1, 3 PIN | Reach Compliance Code: | compliant |
风险等级: | 5.72 | Is Samacsys: | N |
其他特性: | RADIATION HARDENED | 雪崩能效等级(Eas): | 500 mJ |
外壳连接: | DRAIN | 配置: | SINGLE WITH BUILT-IN DIODE |
最小漏源击穿电压: | 500 V | 最大漏极电流 (ID): | 11 A |
最大漏源导通电阻: | 0.5 Ω | FET 技术: | METAL-OXIDE SEMICONDUCTOR |
JESD-30 代码: | R-CBCC-N3 | JESD-609代码: | e0 |
元件数量: | 1 | 端子数量: | 3 |
工作模式: | ENHANCEMENT MODE | 封装主体材料: | CERAMIC, METAL-SEALED COFIRED |
封装形状: | RECTANGULAR | 封装形式: | CHIP CARRIER |
峰值回流温度(摄氏度): | NOT SPECIFIED | 极性/信道类型: | N-CHANNEL |
最大脉冲漏极电流 (IDM): | 44 A | 认证状态: | Qualified |
参考标准: | MIL-19500/603 | 表面贴装: | YES |
端子面层: | Tin/Lead (Sn/Pb) | 端子形式: | NO LEAD |
端子位置: | BOTTOM | 处于峰值回流温度下的最长时间: | NOT SPECIFIED |
晶体管应用: | SWITCHING | 晶体管元件材料: | SILICON |
Base Number Matches: | 1 |
型号 | 品牌 | 获取价格 | 描述 | 数据表 |
JANSF2N7280 | INFINEON |
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Power Field-Effect Transistor, 14.4A I(D), 100V, 0.18ohm, 1-Element, N-Channel, Silicon, M | |
JANSF2N7281 | INFINEON |
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Power Field-Effect Transistor, 9.4A I(D), 200V, 0.4ohm, 1-Element, N-Channel, Silicon, Met | |
JANSF2N7380 | INFINEON |
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Rad hard, 100V, 14.4A, single, N-channel MOSFET, R4 in a TO-257AA package - TO-257AA, 300 | |
JANSF2N7381 | MICROSEMI |
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Power Field-Effect Transistor, 9.4A I(D), 200V, 0.49ohm, 1-Element, N-Channel, Silicon, Me | |
JANSF2N7381 | INFINEON |
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Rad hard, 200V, 9.4A, single, N-channel MOSFET, R4 in a TO-257AA package - TO-257AA, 300 k | |
JANSF2N7382 | INFINEON |
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Rad hard, -100V, -1.1A, single, P-channel MOSFET, R4 in a TO-257AA package - TO-257AA, 300 | |
JANSF2N7383 | ETC |
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-200V 300kRad Hi-Rel Single P-Channel TID Hardened MOSFET in a TO-257AA package | |
JANSF2N7389 | INFINEON |
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TRANSISTOR P-CHANNEL(BVdss=-100V, Rds(on)=0.30ohm, Id=-6.5A) | |
JANSF2N7389U | INFINEON |
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Rad hard, -100V, -6.5A, single, P-channel MOSFET, R4 in an 18-pin LCC package - 18-pin LCC | |
JANSF2N7390 | INFINEON |
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RADIATION HARDENED POWER MOSFET |