是否Rohs认证: | 不符合 | 生命周期: | Active |
包装说明: | HERMETIC SEALED, CERAMIC PACKAGE-3 | Reach Compliance Code: | compliant |
ECCN代码: | EAR99 | 风险等级: | 5.36 |
雪崩能效等级(Eas): | 150 mJ | 配置: | SINGLE WITH BUILT-IN DIODE |
最小漏源击穿电压: | 200 V | 最大漏极电流 (Abs) (ID): | 8 A |
最大漏极电流 (ID): | 9.4 A | 最大漏源导通电阻: | 0.49 Ω |
FET 技术: | METAL-OXIDE SEMICONDUCTOR | JEDEC-95代码: | TO-257AA |
JESD-30 代码: | R-CSFM-P3 | JESD-609代码: | e0 |
元件数量: | 1 | 端子数量: | 3 |
工作模式: | ENHANCEMENT MODE | 最高工作温度: | 150 °C |
封装主体材料: | CERAMIC, METAL-SEALED COFIRED | 封装形状: | RECTANGULAR |
封装形式: | FLANGE MOUNT | 峰值回流温度(摄氏度): | NOT SPECIFIED |
极性/信道类型: | N-CHANNEL | 最大功率耗散 (Abs): | 2 W |
最大脉冲漏极电流 (IDM): | 37.6 A | 认证状态: | Qualified |
参考标准: | MIL-19500/614 | 子类别: | FET General Purpose Power |
表面贴装: | NO | 端子面层: | Tin/Lead (Sn/Pb) |
端子形式: | PIN/PEG | 端子位置: | SINGLE |
处于峰值回流温度下的最长时间: | NOT SPECIFIED | 晶体管应用: | SWITCHING |
晶体管元件材料: | SILICON | Base Number Matches: | 1 |
型号 | 品牌 | 获取价格 | 描述 | 数据表 |
JANSF2N7382 | INFINEON |
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Rad hard, -100V, -1.1A, single, P-channel MOSFET, R4 in a TO-257AA package - TO-257AA, 300 | |
JANSF2N7383 | ETC |
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-200V 300kRad Hi-Rel Single P-Channel TID Hardened MOSFET in a TO-257AA package | |
JANSF2N7389 | INFINEON |
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TRANSISTOR P-CHANNEL(BVdss=-100V, Rds(on)=0.30ohm, Id=-6.5A) | |
JANSF2N7389U | INFINEON |
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Rad hard, -100V, -6.5A, single, P-channel MOSFET, R4 in an 18-pin LCC package - 18-pin LCC | |
JANSF2N7390 | INFINEON |
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RADIATION HARDENED POWER MOSFET | |
JANSF2N7390U | INFINEON |
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Rad hard, -200V, -4A, single, P-channel MOSFET, R4 in an 18-pin LCC packageage - 18-pin LC | |
JANSF2N7394 | INFINEON |
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Rad hard, 60V, 35A, single, N-channel MOSFET, R4 in a TO-254AA package - TO-254AA, 300 kra | |
JANSF2N7394U | INFINEON |
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RADIATION HARDENED POWER MOSFET SURFACE MOUNT (SMD-1) | |
JANSF2N7422 | INFINEON |
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RADIATION HARDENED POWER MOSFET THRU-HOLE (TO-254AA) | |
JANSF2N7422U | INFINEON |
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RADIATION HARDENED POWER MOSFET SURFACE MOUNT |