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JANSF2N7381 PDF预览

JANSF2N7381

更新时间: 2024-09-11 14:56:15
品牌 Logo 应用领域
英飞凌 - INFINEON /
页数 文件大小 规格书
13页 492K
描述
Rad hard, 200V, 9.4A, single, N-channel MOSFET, R4 in a TO-257AA package - TO-257AA, 300 krad(Si) TID, QPL

JANSF2N7381 技术参数

是否Rohs认证: 不符合生命周期:Active
包装说明:HERMETIC SEALED, CERAMIC PACKAGE-3Reach Compliance Code:compliant
ECCN代码:EAR99风险等级:5.36
雪崩能效等级(Eas):150 mJ配置:SINGLE WITH BUILT-IN DIODE
最小漏源击穿电压:200 V最大漏极电流 (Abs) (ID):8 A
最大漏极电流 (ID):9.4 A最大漏源导通电阻:0.49 Ω
FET 技术:METAL-OXIDE SEMICONDUCTORJEDEC-95代码:TO-257AA
JESD-30 代码:R-CSFM-P3JESD-609代码:e0
元件数量:1端子数量:3
工作模式:ENHANCEMENT MODE最高工作温度:150 °C
封装主体材料:CERAMIC, METAL-SEALED COFIRED封装形状:RECTANGULAR
封装形式:FLANGE MOUNT峰值回流温度(摄氏度):NOT SPECIFIED
极性/信道类型:N-CHANNEL最大功率耗散 (Abs):2 W
最大脉冲漏极电流 (IDM):37.6 A认证状态:Qualified
参考标准:MIL-19500/614子类别:FET General Purpose Power
表面贴装:NO端子面层:Tin/Lead (Sn/Pb)
端子形式:PIN/PEG端子位置:SINGLE
处于峰值回流温度下的最长时间:NOT SPECIFIED晶体管应用:SWITCHING
晶体管元件材料:SILICONBase Number Matches:1

JANSF2N7381 数据手册

 浏览型号JANSF2N7381的Datasheet PDF文件第2页浏览型号JANSF2N7381的Datasheet PDF文件第3页浏览型号JANSF2N7381的Datasheet PDF文件第4页浏览型号JANSF2N7381的Datasheet PDF文件第5页浏览型号JANSF2N7381的Datasheet PDF文件第6页浏览型号JANSF2N7381的Datasheet PDF文件第7页 
IRHY7230CM (JANSR2N7381)  
PD-91273G  
Radiation Hardened Power MOSFET  
Thru-Hole (TO-257AA)  
200V, 9.4A, N-channel, Rad Hard HEXFETTechnology  
Features  
Product Summary  
Single event effect (SEE) hardened  
BVDSS: 200V  
ID : 9.4A  
RDS(on),max : 0.40  
QG,max : 50nC  
REF: MIL-PRF-19500/614  
Low RDS(on)  
Low total gate charge  
Simple drive requirements  
Hermetically sealed  
Electrically isolated  
Ceramic eyelets  
ESD rating: Class 1C per MIL-STD-750, Method 1020  
Potential Applications  
DC-DC converter  
Motor drives  
TO-257AA  
Product Validation  
Qualified to JANS screening flow according to MIL-PRF-19500 for space applications  
Description  
IR HiRel rad hard HEXFET technology provides high performance power MOSFETs for space applications. This  
technology has over a decade of proven performance and reliability in satellite applications. These devices have  
been characterized for both Total Dose and Single Event Effects (SEE). The combination of low RDS(on) and low  
gate charge reduces the power losses in switching applications such as DC to DC converters and motor control.  
These devices retain all of the well-established advantages of MOSFETs such as voltage control, fast switching  
and temperature stability of electrical parameters.  
Ordering Information  
Table 1  
Ordering options  
Package  
Part number  
IRHY7230CM  
JANSR2N7381  
IRHY3230CM  
JANSF2N7381  
IRHY4230CM  
JANSG2N7381  
Screening Level  
COTS  
TID Level  
TO-257AA  
TO-257AA  
TO-257AA  
TO-257AA  
TO-257AA  
TO-257AA  
100 krad(Si)  
100 krad(Si)  
300 krad(Si)  
300 krad(Si)  
500 krad(Si)  
500 krad(Si)  
JANS  
COTS  
JANS  
COTS  
JANS  
Please read the Important Notice and Warnings at the end of this document  
page 1 of 13  
www.infineon.com/irhirel  
2022-10-14  
 
 
 
 
 

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