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JANS2N3743 PDF预览

JANS2N3743

更新时间: 2024-11-28 23:59:59
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其他 - ETC 晶体晶体管放大器
页数 文件大小 规格书
16页 84K
描述
TRANSISTOR | BJT | PNP | 300V V(BR)CEO | 50MA I(C) | TO-39

JANS2N3743 数据手册

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INCH-POUND  
MIL-PRF-19500/397G  
1 April 2002  
SUPERSEDING  
MIL-PRF-19500/397F  
21 April 2000  
The documentation and process conversion  
measures necessary to comply with this revision  
shall be completed by 1 July 2002.  
PERFORMANCE SPECIFICATION  
SEMICONDUCTOR DEVICE, TRANSISTOR, PNP, SILICON  
TYPES 2N3743, 2N4930, AND 2N4931  
JAN, JANTX, JANTXV, JANS, JANHC, AND JANKC  
This specification is approved for use by all Departments  
and Agencies of the Department of Defense.  
1. SCOPE  
1.1 Scope. This specification covers the performance requirements for PNP, silicon, high-voltage transistor.  
Four levels of product assurance are provided for each device type as specified in MIL-PRF-19500. Two levels of  
product assurance for die are provided for each unencapsulated device type as specified in MIL-PRF-19500  
* 1.2 Physical dimensions. See figure 1 (TO-39) and figures 2 and 3 for JANHC and JANKC (die) dimensions.  
1.3 Maximum ratings.  
Type  
PT (1)  
PT (2)  
VCBO  
VEBO  
VCEO  
IC  
TJ and TSTG  
TA = +25°C  
TC = +25°C  
W
W
5
5
V dc  
300  
200  
250  
V dc  
V dc  
300  
200  
250  
mA dc  
200  
200  
°C  
2N3743  
2N4930  
2N4931  
1.0  
1.0  
1.0  
5
5
5
-65 to +200  
-65 to +200  
-65 to +200  
5
200  
(1) Derate linearly at 5.71 mW/°C above TA > +25°C.  
(2) Derate linearly at 28.6 mW/°C above TC > +25°C.  
Beneficial comments (recommendations, additions, deletions) and any pertinent data which may be of use in  
improving this document should be addressed to: Commander, Defense Supply Center Columbus, ATTN: DSCC-  
VAC, Post Office Box 3990, Columbus, OH 43216-5000, by using the Standardization Document Improvement  
Proposal (DD Form 1426) appearing at the end of this document or by letter.  
AMSC N/A  
FSC 5961  
DISTRIBUTION STATEMENT A. Approved for public release; distribution is unlimited.  

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