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JANS2N4449 PDF预览

JANS2N4449

更新时间: 2024-02-11 01:39:56
品牌 Logo 应用领域
美高森美 - MICROSEMI 开关晶体管
页数 文件大小 规格书
8页 437K
描述
Small Signal Bipolar Transistor, 0.2A I(C), 15V V(BR)CEO, 1-Element, NPN, Silicon, TO-46, HERMETIC SEALED, METAL CAN-3

JANS2N4449 技术参数

生命周期:Active包装说明:,
Reach Compliance Code:unknown风险等级:5.75
Is Samacsys:NBase Number Matches:1

JANS2N4449 数据手册

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TECHNICAL DATA SHEET  
6 Lake Street, Lawrence, MA 01841  
1-800-446-1158 / (978) 620-2600 / Fax: (978) 689-0803  
Website: http://www.microsemi.com  
Gort Road Business Park, Ennis, Co. Clare, Ireland  
Tel: +353 (0) 65 6840044 Fax: +353 (0) 65 6822298  
NPN SILICON TRANSISTOR  
Qualified per MIL-PRF-19500/317  
DEVICES  
LEVELS  
JAN  
2N2369A  
2N2369AU  
2N2369AUA  
2N2369AUB  
2N2369AUBC *  
2N4449  
JANTX  
JANTXV  
JANS  
* Available to JANS quality level only.  
ABSOLUTE MAXIMUM RATINGS (TC = +25°C unless otherwise noted)  
Parameters / Test Conditions  
Collector-Emitter Voltage  
Symbol  
VCEO  
VEBO  
VCBO  
ICES  
Value  
15  
Unit  
Vdc  
Vdc  
Vdc  
Vdc  
Emitter-Base Voltage  
Collector-Base Voltage  
Collector-Emitter Voltage  
4.5  
40  
TO-18 (TO-206AA)  
2N2369A  
40  
Total Power Dissipation @  
TA = +25°C  
2N2369A; 2N4449  
UA, UB, UBC  
U
0.36 (1)  
0.36 (1, 3)  
0.50 (2)  
PT  
W
TO-46 (TO-206AB)  
2N4449  
Operating & Storage Junction Temperature Range  
Top, Tstg  
-65 to +200  
°C  
THERMAL CHARACTERISTICS  
Parameters / Test Conditions  
Symbol  
Value  
Unit  
Thermal Resistance, Ambient-to-Case  
2N2369A; 2N4449  
UA, UB, UBC  
U
400  
486 (3)  
350  
°C/W  
RJA  
SURFACE MOUNT  
UA  
Note:  
1. Derate linearly 2.06 mW°/C above TA = +25°C.  
2. Derate linearly 3.44 mW°/C above TA = +54.5°C.  
3. Mounted on FR-4 PCB (1Oz. Cu) with contacts 20 mils larger than package pads.  
ELECTRICAL CHARACTERISTICS (TA = +25°C, unless otherwise noted)  
SURFACE MOUNT  
UB & UBC  
(UBC = Ceramic Lid Version)  
Parameters / Test Conditions  
OFF CHARACTERTICS  
Symbol  
Min. Max. Unit  
Collector-Emitter Breakdown Voltage  
IC = 10mAdc  
Collector-Base Cutoff Current  
VCE = 20Vdc  
V(BR)CEO  
ICES  
15  
Vdc  
0.4  
Adc  
SURFACE MOUNT  
U (Dual Transistor)  
T4-LDS-0057 Rev. 3 (110213)  
Page 1 of 8  

JANS2N4449 替代型号

型号 品牌 替代类型 描述 数据表
2N4449 MICROSEMI

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