Datasheet > JANS2N5002

JANS2N5002

更新时间： 2024-09-26 23:59:59

品牌	Logo	应用领域
其他 - ETC		晶体晶体管
页数	文件大小	规格书
21页	116K
描述
TRANSISTOR \| BJT \| NPN \| 80V V(BR)CEO \| 5A I(C) \| TO-210AA

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JANS2N5002 数据手册

The documentation and process

conversion measures necessary to

comply with this revision shall be

completed by 31 October 2001.

INCH-POUND

MIL-PRF-19500/534C

31 July 2001

SUPERSEDING

MIL-PRF-19500/534B

30 December 1997

PERFORMANCE SPECIFICATION

SEMICONDUCTOR DEVICE, TRANSISTOR, NPN, SILICON, POWER

TYPES 2N5002, 2N5004, JAN, JANTX, JANTXV, JANS, JANHC, AND JANKC

This specification is approved for use by all Departments

and Agencies of the Department of Defense.

1. SCOPE

1.1 Scope. This specification covers the performance requirements for NPN, silicon, power transistors for use in

high-speed power-switching applications. Four levels of product assurance are provided for each encapsulated

device type as specified in MIL-PRF-19500. Two levels of product assurance for each unencapsulated device type

die.

1.2 Physical dimensions. See figure 1 (T6-C, similar to T0-59) and figure 2 (die).

* 1.3 Maximum ratings.

P_T(1)

P_T(2)

V_CBO

V_CEO

V_EBO

I_C

I_C(3)

Reverse

pulse

_stgand T_J

T_A= 25°C T_C= 25°C

energy

V dc

100

V dc

5.5

A dc

°C

-65 to +200

(1) Derate linearly 11.4 mW/°C for T_A> 25°C.

(2) Derate linearly 331 mW/°C for T_C> 25°C.

(3) This value applies for Pw ≤ 8.3 ms, duty cycle ≤ 1 percent.

Beneficial comments (recommendations, additions, deletions) and any pertinent data which may be of use in

improving this document should be addressed to: Defense Supply Center, Columbus, ATTN: DSCC-VAC,

P.O. Box 3990, Columbus, OH 43216-5000, by using the Standardization Document Improvement Proposal (DD

Form 1426) appearing at the end of this document or by letter.

AMSC N/A

FSC 5961

DISTRIBUTION STATEMENT. Approved for public release; distribution is unlimited.

12 3 4 5 6 7...21

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