Datasheet > JANS2N5152

JANS2N5152

更新时间： 2024-11-22 23:59:59

品牌	Logo	应用领域
其他 - ETC		晶体晶体管
页数	文件大小	规格书
23页	135K
描述
TRANSISTOR \| BJT \| NPN \| 80V V(BR)CEO \| 2A I(C) \| TO-39

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JANS2N5152 数据手册

INCH-POUND

MIL-PRF-19500/544D

27 July 2001

SUPERSEDING

MIL-PRF-19500/544C

21 July 2000

The documentation and process conversion

measures necessary to comply with this revision

shall be completed by 27 October 2001.

PERFORMANCE SPECIFICATION

SEMICONDUCTOR DEVICE, TRANSISTOR, NPN, SILICON, POWER

TYPES 2N5152, 2N5154, 2N5152L, 2N5154L, 2N5152U3, 2N5154U3

JAN, JANTX, JANTXV, JANS, JANHC, AND JANKC

This specification is approved for use by all Departments

and Agencies of the Department of Defense.

1. SCOPE

1.1 Scope. This specification covers the performance requirements for NPN, silicon, power transistors for use in

high-speed power-switching applications. Four levels of product assurance are provided for each encapsulated

device type and two levels of product assurance are provided for each unencapsulated device type as specified in

MIL-PRF-19500.

1.2 Physical dimensions. Figure 1 (similar to T0-5 and T0-39), figures 2, 3, and 4 (die dimensions), and figure 5

(U3).

1.3 Maximum ratings.

Type

Reverse

pulse (2)

energy

Safe

operating

area

and T

CBO

CEO

EBO

stg

(1)

= +25°C

V dc

A dc

°C

2N5152, L

2N5154, L

1 (3)

11.8 (4)

100

5.5

See

figure 6

-65 to +200

2N5152U3

2N5154U3

1.16 (5)

100 (6)

100

5.5

See

figure 6

-65 to +200

(1) This value applies for Pw ≤ 8.3 ms, duty cycle ≤ 1%

(2) This rating is based on the capability of the transistors to operate safely in the unclamped inductive load

energy test circuit of figure 7.

(3) Derate linearly 5.7 mW/°C for T_A> +25°C

(4) Derate linearly 66.7 mW/°C for T_C> +25°C

(5) Derate linearly 6.67 mW/°C for T_A> +25°C

(6) Derate linearly 571 mW/°C for T_C> +25°C

Beneficial comments (recommendations, additions, deletions) and any pertinent data which may be of use in

improving this document should be addressed to: Commander, Defense Supply Center Columbus, ATTN: DSCC-

VAC, Post Office Box 3990, Columbus, OH 43216-5000, by using the Standardization Document Improvement

Proposal (DD Form 1426) appearing at the end of this document or by letter.

AMSC N/A

FSC 5961

Distribution statement. Approved for public release; distribution is unlimited.

12 3 4 5 6 7...23

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与JANS2N5152相关器件

型号	品牌	获取价格	描述	数据表
JANS2N5152L	MICROSEMI	获取价格	Power Bipolar Transistor, 2A I(C), 80V V(BR)CEO, NPN, Silicon, TO-5, Metal, 3 Pin, TO-5, 3
JANS2N5152U3	MICROSEMI	获取价格	Small Signal Bipolar Transistor, 5A I(C), NPN,
JANS2N5153	MICROSEMI	获取价格	PNP POWER SILICON TRANSISTOR
JANS2N5153L	MICROSEMI	获取价格	PNP POWER SILICON TRANSISTOR
JANS2N5153U3	MICROSEMI	获取价格	PNP POWER SILICON TRANSISTOR
JANS2N5154	MICROSEMI	获取价格	Power Bipolar Transistor, 2A I(C), 80V V(BR)CEO, NPN, Silicon, TO-5, Metal, 3 Pin, TO-5, 3
JANS2N5154L	MICROSEMI	获取价格	Power Bipolar Transistor, 2A I(C), 80V V(BR)CEO, NPN, Silicon, TO-5, Metal, 3 Pin, TO-5, 3
JANS2N5154U3	MICROSEMI	获取价格	Small Signal Bipolar Transistor, 2A I(C), NPN,
JANS2N5237	ETC	获取价格	TRANSISTOR \| BJT \| NPN \| 120V V(BR)CEO \| 5A I(C) \| TO-5
JANS2N5237S	ETC	获取价格	TRANSISTOR \| BJT \| NPN \| 120V V(BR)CEO \| 5A I(C) \| TO-5VAR

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