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JANS2N5551UBT

更新时间： 2024-06-20 14:40:46

品牌	Logo	应用领域
意法半导体 - STMICROELECTRONICS		双极性晶体管
页数	文件大小	规格书
10页	286K
描述
高可靠性NPN双极性晶体管160 V、0.5 A

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数据手册

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JANS2N5551UBT 数据手册

2N5551HR

Hi-Rel NPN bipolar transistor 160 V - 0.5 A

Features

BV_CEO

160 V

I_C(max)

0.5 A

> 80

_FEat 5 V - 10 mA

TO-18

LCC-3

Operating temperature range

-65°C to +200°C

■ Linear gain characteristics

■ ESCC qualified

TO-39

■ European preferred part list - EPPL

■ 100 krad low dose rate

■ Hermetic packages

Figure 1.

Internal schematic diagram

Description

The 2N5551HR is a silicon planar epitaxial NPN

transistor in TO-18, TO-39 and LCC-3 packages.

It is specifically designed for aerospace Hi-Rel

applications and ESCC qualified according to the

5201-019 specification. In case of conflict

between this datasheet and ESCC detailed

specification, the latter prevails.

Table 1.

Device summary

ESCC Part

number

Rad.

level

Mass

Order codes

Qual. Level

Packages

Lead Finish

(g)

EPPL

2N5551UB1

2N5551UB

SOC5551

Eng. Model

LCC-3UB

Gold

0.06

0.40

1.20

5201/019/08 or 09 ESCC Flight

Eng. Model

LCC-3UB Gold / Solder Dip ⁽¹⁾

LCC-3

TO-18

TO-39

Gold

SOC5551HRB 5201/019/04 or 05 ESCC Flight

Gold / Solder Dip ⁽¹⁾

SOC5551SW

2N5551/T1

2N5551HR

5201/019/05

ESCC Flight 100 krad

Eng. Model

Solder Dip

Gold

5201/019/01 or 02 ESCC Flight

Gold / Solder Dip ⁽¹⁾

2N5551SHR 5201/019/06 or 07 ESCC Flight

1. Depending ESCC part number mentioned on the purchase order.

July 2010

Doc ID 16935 Rev 3

1/10

www.st.com

12 3 4 5 6 7...10

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