JANS2N5666S

更新时间： 2024-01-12 12:00:54

品牌	Logo	应用领域
美高森美 - MICROSEMI		晶体开关晶体管功率双极晶体管
页数	文件大小	规格书
3页	118K
描述
NPN POWER SILICON SWITCHING TRANSISTOR

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中文翻译

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技术参数
数据手册

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JANS2N5666S 技术参数

生命周期：	Active	包装说明：	,
Reach Compliance Code：	unknown	风险等级：	5.72
Is Samacsys：	N	Base Number Matches：	1

JANS2N5666S 数据手册

TECHNICAL DATA SHEET

6 Lake Street, Lawrence, MA 01841

1-800-446-1158 / (978) 620-2600 / Fax: (978) 689-0803

Website: http: //www.microsemi.com

NPN POWER SILICON SWITCHING TRANSISTOR

Qualified per MIL-PRF-19500/455

DEVICES

LEVELS

2N5664

2N5665

2N5666

2N5666S

2N5666U3

2N5667

2N5667S

JAN

JANTX

JANTV

JANS

ABSOLUTE MAXIMUM RATINGS (T_C= +25°C unless otherwise noted)

2N5664

2N5666, S 2N5667, S

2N5665

Parameters / Test Conditions

Symbol

Unit

Collector-Emitter Voltage

Collector-Base Voltage

Emitter-Base Voltage

Base Current

V_CEO

V_CBO

V_EBO

I_B

200

250

300

400

Vdc

Adc

TO-66 (TO-213AA)

2N5664, 2N5665

6.0

1.0

5.0

Collector Current

I_C

2N5664 2N5666, S

2N5665 2N5667, S

2N5666U3

Total

Power Dissipation

@ T_A= +25°C

@ T_C= +100°C

2.5

1.2

1.5

P_T

Operating & Storage Junction

Temperature Range

TO-5

2N5666, 2N5667

T_J, T_stg

-65 to +200

°C

Note: 1) Consult 19500/455 for thermal derating curves.

ELECTRICAL CHARACTERISTICS (T_C= +25°C, unless otherwise noted)

Parameters / Test Conditions

Symbol

Min.

Max.

Unit

OFF CHARACTERTICS

Collector-Emitter Breakdown Voltage

TO-39 (TO-205AD)

2N5666S, 2N5667S

I_C= 10mAdc

2N5664, 2N5666

250

400

V_(BR)CER

V_(BR)EBO

I_CES

Vdc

2N5665, 2N5667

Emitter-Base Breakdown Voltage

6.0

I_E= 10μAdc

Collector-Emitter Cutoff Current

V_CE= 200Vdc

2N5664, 2N5666

2N5665, 2N5667

0.2

μAdc

V_CE= 300Vdc

U-3

2N5666U3

Collector-Base Cutoff Current

V_CB= 200Vdc

2N5664, 2N5666

2N5665, 2N5667

0.1

1.0

μAdc

_CB= 250Vdc

V_CB= 300Vdc

_CB= 400Vdc

mAdc

I_CBO

0.1

1.0

μAdc

mAdc

T4-LDS-0062 Rev. 1 (081095)

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中文翻译

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与JANS2N5666S相关器件

型号	品牌	获取价格	描述	数据表
JANS2N5666U3	MICROSEMI	获取价格	NPN POWER SILICON SWITCHING TRANSISTOR
JANS2N5667	MICROSEMI	获取价格	NPN POWER SILICON SWITCHING TRANSISTOR
JANS2N5667S	MICROSEMI	获取价格	NPN POWER SILICON SWITCHING TRANSISTOR
JANS2N6193	ETC	获取价格	TRANSISTOR \| BJT \| PNP \| 100V V(BR)CEO \| 5A I(C) \| TO-39
JANS2N6249	MICROSEMI	获取价格	Power Bipolar Transistor, 10A I(C), 200V V(BR)CEO, 1-Element, NPN, Silicon, TO-204AA, Meta
JANS2N6250T1	MICROSEMI	获取价格	Power Bipolar Transistor, 10A I(C), 275V V(BR)CEO, 1-Element, NPN, Silicon, TO-254AA, TO-2
JANS2N6251T1	MICROSEMI	获取价格	Power Bipolar Transistor, 10A I(C), 350V V(BR)CEO, 1-Element, NPN, Silicon, TO-254AA, TO-2
JANS2N6338	MICROSEMI	获取价格	Power Bipolar Transistor, 25A I(C), 100V V(BR)CEO, NPN, Silicon, TO-3, Metal, 2 Pin, METAL
JANS2N6339	MICROSEMI	获取价格	Power Bipolar Transistor, 25A I(C), 120V V(BR)CEO, NPN, Silicon, TO-3, Metal, 2 Pin, METAL
JANS2N6340	MICROSEMI	获取价格	Power Bipolar Transistor, 25A I(C), 140V V(BR)CEO, NPN, Silicon, TO-3, Metal, 2 Pin, METAL