Datasheet > JANS2N5237

JANS2N5237

更新时间： 2024-01-29 11:30:22

品牌	Logo	应用领域
其他 - ETC		晶体晶体管开关
页数	文件大小	规格书
21页	100K
描述
TRANSISTOR \| BJT \| NPN \| 120V V(BR)CEO \| 5A I(C) \| TO-5

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JANS2N5237 技术参数

是否Rohs认证：	不符合	生命周期：	Active
零件包装代码：	TO-5	包装说明：	CYLINDRICAL, O-MBCY-W3
针数：	3	Reach Compliance Code：	compliant
风险等级：	5.24	JEDEC-95代码：	TO-5
JESD-30 代码：	O-MBCY-W3	JESD-609代码：	e0
端子数量：	3	封装主体材料：	METAL
封装形状：	ROUND	封装形式：	CYLINDRICAL
认证状态：	Qualified	参考标准：	MILITARY STANDARD (USA)
表面贴装：	NO	端子面层：	Tin/Lead (Sn/Pb)
端子形式：	WIRE	端子位置：	BOTTOM
晶体管元件材料：	SILICON	Base Number Matches：	1

JANS2N5237 数据手册

The documentation and process conversion

measures necessary to comply with this revision

shall be completed by 5 October 2002.

INCH-POUND

MIL-PRF-19500/394G

5 July 2002

SUPERSEDING

MIL-PRF-19500/394F

23 April 2001

PERFORMANCE SPECIFICATION

SEMICONDUCTOR DEVICE, TRANSISTOR, NPN, SILICON, POWER SWITCHING

TYPES: 2N4150, 2N5237, 2N5238, 2N4150S, 2N5237S, AND 2N5238S

JAN, JANTX, JANTXV, JANS, JANHC AND JANKC

This specification is approved for use by all Departments

and Agencies of the Department of Defense.

1. SCOPE

1.1 Scope. This specification covers the performance requirements for NPN, silicon, low-power, high voltage

transistors. Four levels of product assurance are provided for each encapsulated device type as specified in

MIL-PRF-19500 and two levels of product assurance are provided for each unencapsulated device type.

1.2 Physical dimensions. See figure 1 (TO- 5) and figures 2 and 3 (JANHC and JANKC).

1.3 Maximum ratings.

Types

CBO

CEO

EBO

and

R_qJC

(max)

R_qJA

(min)

T (1)

T (2)

STG

= +25°C

+25°C

V dc

A dc

°C

°C/mW

2N4150, S

2N5237, S

2N5238, S

1.0

5.0

100

150

200

120

170

-65 to +200

.020

.175

(1) Derate linearly 5.7 mW/°C for T_A> +25°C.

(2) Derate linearly 50 mW/°C for T_C> +100°C.

Beneficial comments (recommendations, additions, deletions) and any pertinent data which may be of use in

improving this document should be addressed to: Defense Supply Center, Columbus, ATTN: DSCC-VAC, P.O.

Box 3990, Columbus, OH 43216-5000, by using the Standardization Document Improvement Proposal (DD Form

1426) appearing at the end of this document or by letter.

AMSC N/A

FSC 5961

DISTRIBUTION STATEMENT A. Approved for public release; distribution is unlimited.

12 3 4 5 6 7...21

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与JANS2N5237相关器件

型号	品牌	获取价格	描述	数据表
JANS2N5237S	ETC	获取价格	TRANSISTOR \| BJT \| NPN \| 120V V(BR)CEO \| 5A I(C) \| TO-5VAR
JANS2N5238	ETC	获取价格	TRANSISTOR \| BJT \| NPN \| 170V V(BR)CEO \| 5A I(C) \| TO-5
JANS2N5238S	ETC	获取价格	TRANSISTOR \| BJT \| NPN \| 170V V(BR)CEO \| 5A I(C) \| TO-5VAR
JANS2N5339	MICROSEMI	获取价格	Small Signal Bipolar Transistor, 5A I(C), 100V V(BR)CEO, 1-Element, NPN, Silicon, TO-205AD
JANS2N5339U3	MICROSEMI	获取价格	Small Signal Bipolar Transistor, 5A I(C), 100V V(BR)CEO, 1-Element, NPN, Silicon, TO-276AA
JANS2N5401UBG	STMICROELECTRONICS	获取价格	高可靠性PNP双极性晶体管150 V、0.5 A
JANS2N5401UBT	STMICROELECTRONICS	获取价格	高可靠性PNP双极性晶体管150 V、0.5 A
JANS2N5415	ETC	获取价格	TRANSISTOR \| BJT \| PNP \| 200V V(BR)CEO \| 1A I(C) \| TO-39
JANS2N5415S	ETC	获取价格	TRANSISTOR \| BJT \| PNP \| 200V V(BR)CEO \| 1A I(C) \| TO-39
JANS2N5415U4	MICROSEMI	获取价格	Small Signal Bipolar Transistor,

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