是否Rohs认证: | 不符合 | 生命周期: | Obsolete |
零件包装代码: | TO-3 | 包装说明: | TO-3, 2 PIN |
针数: | 2 | Reach Compliance Code: | unknown |
ECCN代码: | EAR99 | HTS代码: | 8541.29.00.95 |
风险等级: | 5.28 | 外壳连接: | COLLECTOR |
最大集电极电流 (IC): | 10 A | 集电极-发射极最大电压: | 200 V |
配置: | SINGLE | 最小直流电流增益 (hFE): | 10 |
JEDEC-95代码: | TO-204AA | JESD-30 代码: | O-MBFM-P2 |
元件数量: | 1 | 端子数量: | 2 |
封装主体材料: | METAL | 封装形状: | ROUND |
封装形式: | FLANGE MOUNT | 峰值回流温度(摄氏度): | NOT SPECIFIED |
极性/信道类型: | NPN | 认证状态: | Qualified |
参考标准: | MIL-19500/510 | 表面贴装: | NO |
端子形式: | PIN/PEG | 端子位置: | BOTTOM |
处于峰值回流温度下的最长时间: | NOT SPECIFIED | 晶体管元件材料: | SILICON |
型号 | 品牌 | 获取价格 | 描述 | 数据表 |
JANS2N6250T1 | MICROSEMI |
获取价格 |
Power Bipolar Transistor, 10A I(C), 275V V(BR)CEO, 1-Element, NPN, Silicon, TO-254AA, TO-2 |
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JANS2N6251T1 | MICROSEMI |
获取价格 |
Power Bipolar Transistor, 10A I(C), 350V V(BR)CEO, 1-Element, NPN, Silicon, TO-254AA, TO-2 |
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JANS2N6338 | MICROSEMI |
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Power Bipolar Transistor, 25A I(C), 100V V(BR)CEO, NPN, Silicon, TO-3, Metal, 2 Pin, METAL |
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JANS2N6339 | MICROSEMI |
获取价格 |
Power Bipolar Transistor, 25A I(C), 120V V(BR)CEO, NPN, Silicon, TO-3, Metal, 2 Pin, METAL |
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JANS2N6340 | MICROSEMI |
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Power Bipolar Transistor, 25A I(C), 140V V(BR)CEO, NPN, Silicon, TO-3, Metal, 2 Pin, METAL |
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JANS2N6676 | MICROSEMI |
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Transistor |
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JANS2N6676T1 | MICROSEMI |
获取价格 |
Transistor |
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JANS2N6678 | MICROSEMI |
获取价格 |
Transistor |
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JANS2N6760 | MICROSEMI |
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Power Field-Effect Transistor, 5.5A I(D), 400V, 1ohm, 1-Element, N-Channel, Silicon, Metal |
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JANS2N6764 | MICROSEMI |
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Power Field-Effect Transistor, 38A I(D), 100V, 0.055ohm, 1-Element, N-Channel, Silicon, Me |
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