生命周期: | Active | 包装说明: | CHIP CARRIER, R-CBCC-N3 |
针数: | 3 | Reach Compliance Code: | unknown |
ECCN代码: | EAR99 | HTS代码: | 8541.29.00.95 |
风险等级: | 5.33 | Is Samacsys: | N |
外壳连接: | COLLECTOR | 最大集电极电流 (IC): | 5 A |
集电极-发射极最大电压: | 200 V | 配置: | SINGLE |
最小直流电流增益 (hFE): | 40 | JESD-30 代码: | R-CBCC-N3 |
元件数量: | 1 | 端子数量: | 3 |
封装主体材料: | CERAMIC, METAL-SEALED COFIRED | 封装形状: | RECTANGULAR |
封装形式: | CHIP CARRIER | 极性/信道类型: | NPN |
认证状态: | Qualified | 参考标准: | MIL-19500/455E |
表面贴装: | YES | 端子形式: | NO LEAD |
端子位置: | BOTTOM | 晶体管应用: | SWITCHING |
晶体管元件材料: | SILICON | Base Number Matches: | 1 |
型号 | 品牌 | 获取价格 | 描述 | 数据表 |
JANS2N5667 | MICROSEMI |
获取价格 |
NPN POWER SILICON SWITCHING TRANSISTOR |
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JANS2N5667S | MICROSEMI |
获取价格 |
NPN POWER SILICON SWITCHING TRANSISTOR |
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JANS2N6193 | ETC |
获取价格 |
TRANSISTOR | BJT | PNP | 100V V(BR)CEO | 5A I(C) | TO-39 |
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JANS2N6249 | MICROSEMI |
获取价格 |
Power Bipolar Transistor, 10A I(C), 200V V(BR)CEO, 1-Element, NPN, Silicon, TO-204AA, Meta |
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JANS2N6250T1 | MICROSEMI |
获取价格 |
Power Bipolar Transistor, 10A I(C), 275V V(BR)CEO, 1-Element, NPN, Silicon, TO-254AA, TO-2 |
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JANS2N6251T1 | MICROSEMI |
获取价格 |
Power Bipolar Transistor, 10A I(C), 350V V(BR)CEO, 1-Element, NPN, Silicon, TO-254AA, TO-2 |
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JANS2N6338 | MICROSEMI |
获取价格 |
Power Bipolar Transistor, 25A I(C), 100V V(BR)CEO, NPN, Silicon, TO-3, Metal, 2 Pin, METAL |
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JANS2N6339 | MICROSEMI |
获取价格 |
Power Bipolar Transistor, 25A I(C), 120V V(BR)CEO, NPN, Silicon, TO-3, Metal, 2 Pin, METAL |
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JANS2N6340 | MICROSEMI |
获取价格 |
Power Bipolar Transistor, 25A I(C), 140V V(BR)CEO, NPN, Silicon, TO-3, Metal, 2 Pin, METAL |
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JANS2N6676 | MICROSEMI |
获取价格 |
Transistor |
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