型号 | 品牌 | 获取价格 | 描述 | 数据表 |
JANS2N6340 | MICROSEMI |
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Power Bipolar Transistor, 25A I(C), 140V V(BR)CEO, NPN, Silicon, TO-3, Metal, 2 Pin, METAL | |
JANS2N6676 | MICROSEMI |
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Transistor | |
JANS2N6676T1 | MICROSEMI |
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Transistor | |
JANS2N6678 | MICROSEMI |
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Transistor | |
JANS2N6760 | MICROSEMI |
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Power Field-Effect Transistor, 5.5A I(D), 400V, 1ohm, 1-Element, N-Channel, Silicon, Metal | |
JANS2N6764 | MICROSEMI |
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Power Field-Effect Transistor, 38A I(D), 100V, 0.055ohm, 1-Element, N-Channel, Silicon, Me | |
JANS2N6766 | MICROSEMI |
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Power Field-Effect Transistor, 30A I(D), 200V, 0.085ohm, 1-Element, N-Channel, Silicon, Me | |
JANS2N6768 | MICROSEMI |
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Power Field-Effect Transistor, 14A I(D), 400V, 0.3ohm, 1-Element, N-Channel, Silicon, Meta | |
JANS2N6782 | MICROSEMI |
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Power Field-Effect Transistor, 3.5A I(D), 100V, 0.6ohm, 1-Element, N-Channel, Silicon, Met | |
JANS2N6784 | MICROSEMI |
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Power Field-Effect Transistor, 2.25A I(D), 200V, 1.5ohm, 1-Element, N-Channel, Silicon, Me |