INCH-POUND
The documentation and process conversion measures
necessary to comply with this amendment shall be
completed by 23 June, 2001.
MIL-PRF-19500/453D
23 March 2001
SUPERSEDING
MIL-PRF-19500/453C
15 December 1997
PERFORMANCE SPECIFICATION
SEMICONDUCTOR DEVICE, TRANSISTOR, NPN, SILICON, HIGH-FREQUENCY
TYPES 2N5109, 2N5109UB, JAN, JANTX, JANTXV, AND JANS, JANHC and JANKC
This specification is approved for use by all Departments
and Agencies of the Department of Defense.
1. SCOPE
1.1 Scope. This specification covers the performance requirements for NPN silicon, VHF-UHF amplifier transistors.
Four levels of product assurance are provided for each device type as specified in MIL-PRF-19500. Two levels of
product assurance are provided for die.
1.2 Physical dimensions. See figure 1 herein (similar to T0-39), figure 2 (2N5109UB) and figure 3 (JANHC2N5109,
JANKC2N5109).
1.3 Maximum ratings.
Rja
TJ
PT (1) (2)
VCBO
VCEO
IC
VEBO
TSTG
TA = +25°C
W
1
V dc
40
V dc
20
A dc
0.4
V dc
3.0
°C
°C/W
175
°C
+200
-65 to +200
(1) Derate at 5.71 mW/°C above TA > +25°C.
(2) PT = 2.9 W at TC = +25°C, derate at 16.6 mW/°C above TC > +25°C.
1.4 Primary electrical characteristics (common to all types).
Power gain
½hFE
½
hFE
VCE(SAT)
IC = 100mA dc
IB = 10 mA dc
Cobo
Limits
VCE = 15 V dc
IC = 50 mA dc
IE = 0
VCE = 15 V dc
IC = 50 mA dc
f = 200 MHz
IC = 50 mA dc
f = 200 MHz
Pin = -10dB
VCE = 15 V dc
100 kHz £ f £ 1 MHz
VCB = 28 V dc
V dc
0.5
pF
dB
11.0
Min
Max
40
150
6.0
11.0
3.5
Beneficial comments (recommendations, additions, deletions) and any pertinent data which may be of use in
improving this document should be addressed to: Defense Supply Center, Columbus, ATTN: DSCC-VAC, Post
Office Box 3990, Columbus, OH 43216-5000, by using the Standardization Document Improvement Proposal (DD
Form 1426) appearing at the end of this document or by letter.
AMSC N/A
FSC 5961
DISTRIBUTION STATEMENT A. Approved for public release; distribution is unlimited.