JANS2N3867S

更新时间： 2024-11-29 12:03:07

品牌	Logo	应用领域
美高森美 - MICROSEMI		晶体晶体管
页数	文件大小	规格书
4页	121K
描述
PNP SILICON LOW POWER TRANSISTOR

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数据手册
替代型号

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JANS2N3867S 数据手册

TECHNICAL DATA SHEET

6 Lake Street, Lawrence, MA 01841

1-800-446-1158 / (978) 620-2600 / Fax: (978) 689-0803

Website: http: //www.microsemi.com

Gort Road Business Park, Ennis, Co. Clare, Ireland

Tel: +353 (0) 65 6840044 Fax: +353 (0) 65 6822298

PNP SILICON LOW POWER TRANSISTOR

Qualified per MIL-PRF-19500/350

DEVICES

LEVELS

JAN

JANTX

JANTXV

JANS

2N3867

2N3868

2N3867S

2N3868S

ABSOLUTE MAXIMUM RATINGS (T_C= +25°C unless otherwise noted)

Parameters / Test Conditions

Collector-Base Voltage

Symbol 2N3867 2N3868

Unit

Vdc

V_CBO

V_CEO

V_EBO

I_C

Collector-Emitter Voltage

Emitter-Base Voltage

Collector Current

Vdc

4.0

3.0

1.0

Vdc

mAdc

W/°C

°C

Total Power Dissipation

@ T_A= +25°C ⁽¹⁾

P_T

Operating & Storage Junction Temperature Range

T_J, T_stg

-65 to +200

THERMAL CHARACTERISTICS

Parameters / Test Conditions

TO-5 *

2N3867, 2N3868

Symbol

Max.

Unit

Thermal Resistance, Junction-to-Ambient

175

°C/mW

R_θJA

Note: * Electrical characteristics for “S” suffix devices are identical to the “non S”

corresponding devices.

1/ Derate linearly 5.71mW/°C for T_A> +25°C

2/ Derate linearly 57.1mW/°C for T_C> +25°C

ELECTRICAL CHARACTERISTICS (T_A= +25°C, unless otherwise noted)

Parameters / Test Conditions

OFF CHARACTERTICS

Collector-Emitter Breakdown Current

Symbol

Min.

Max.

Unit

V_(BR)CEO

Vdc

2N3867, S

2N3868, S

I_C= 10μAdc

TO-39 * (TP-205AD)

2N3867S, 2N3868S

Collector-Base Cutoff Current

V_CB= 40Vdc

2N3867, S

2N3868, S

I_CBO

I_EBO

100

µAdc

_CB= 60Vdc

Emitter-Base Cutoff Current

V_EB= 4.0Vdc

Collector-Emitter Cutoff Current

V_CE= 40Vdc

2N3867, S

2N3868, S

2N3867, S

2N3868, S

1.0

_CE= 60Vdc

I_CEX

µAdc

V_CE= 40Vdc, T_A= +150°C

V_CE= 60Vdc, T_A= +150°C

T4-LDS-0170 Rev. 1 (101121)

Page 1 of 4

12 3 4

中文翻译

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JANS2N3867S 替代型号

型号	品牌	替代类型	描述	数据表
JANTXV2N3867S	MICROSEMI	功能相似	Silicon PNP Power Transistors
JANTX2N3867S	MICROSEMI	功能相似	Silicon PNP Power Transistors

与JANS2N3867S相关器件

型号	品牌	获取价格	描述	数据表
JANS2N3868	MICROSEMI	获取价格	PNP SILICON LOW POWER TRANSISTOR
JANS2N3868S	MICROSEMI	获取价格	PNP SILICON LOW POWER TRANSISTOR
JANS2N3996	MICROSEMI	获取价格	Power Bipolar Transistor, 5A I(C), 80V V(BR)CEO, 1-Element, NPN, Silicon, TO-111, Metal, 3
JANS2N3997	MICROSEMI	获取价格	Power Bipolar Transistor, 5A I(C), 80V V(BR)CEO, 1-Element, NPN, Silicon, TO-111, Metal, 3
JANS2N3998	MICROSEMI	获取价格	Power Bipolar Transistor, 5A I(C), 80V V(BR)CEO, 1-Element, NPN, Silicon, TO-111, Metal, 3
JANS2N3999	MICROSEMI	获取价格	Power Bipolar Transistor, 5A I(C), 80V V(BR)CEO, 1-Element, NPN, Silicon, TO-111, Metal, 3
JANS2N4029	MICROSEMI	获取价格	Small Signal Bipolar Transistor, 1A I(C), 80V V(BR)CEO, 1-Element, PNP, Silicon, TO-206AA,
JANS2N4033UA	MICROSEMI	获取价格	Small Signal Bipolar Transistor, 1A I(C), 80V V(BR)CEO, 1-Element, PNP, Silicon, CERAMIC P
JANS2N4033UB	MICROSEMI	获取价格	Small Signal Bipolar Transistor, 1A I(C), 80V V(BR)CEO, 1-Element, PNP, Silicon, CERAMIC P
JANS2N4150	ETC	获取价格	TRANSISTOR \| BJT \| NPN \| 80V V(BR)CEO \| 5A I(C) \| TO-5

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