是否无铅: | 含铅 | 是否Rohs认证: | 不符合 |
生命周期: | Active | 包装说明: | CYLINDRICAL, O-MBCY-W3 |
Reach Compliance Code: | compliant | ECCN代码: | EAR99 |
HTS代码: | 8541.29.00.95 | 风险等级: | 5.2 |
最大集电极电流 (IC): | 1 A | 集电极-发射极最大电压: | 140 V |
配置: | SINGLE | 最小直流电流增益 (hFE): | 60 |
JEDEC-95代码: | TO-5 | JESD-30 代码: | O-MBCY-W3 |
JESD-609代码: | e0 | 元件数量: | 1 |
端子数量: | 3 | 最高工作温度: | 200 °C |
封装主体材料: | METAL | 封装形状: | ROUND |
封装形式: | CYLINDRICAL | 峰值回流温度(摄氏度): | NOT SPECIFIED |
极性/信道类型: | PNP | 最大功率耗散 (Abs): | 1 W |
认证状态: | Qualified | 参考标准: | MIL-19500/357H |
子类别: | Other Transistors | 表面贴装: | NO |
端子面层: | Tin/Lead (Sn/Pb) | 端子形式: | WIRE |
端子位置: | BOTTOM | 处于峰值回流温度下的最长时间: | NOT SPECIFIED |
晶体管应用: | SWITCHING | 晶体管元件材料: | SILICON |
最大关闭时间(toff): | 650 ns | 最大开启时间(吨): | 200 ns |
Base Number Matches: | 1 |
型号 | 品牌 | 获取价格 | 描述 | 数据表 |
JANS2N3635UB | MICROSEMI |
获取价格 |
Small Signal Bipolar Transistor, 1A I(C), 140V V(BR)CEO, 1-Element, PNP, Silicon, CERAMIC | |
JANS2N3635UB/TR | MICROSEMI |
获取价格 |
Small Signal Bipolar Transistor, | |
JANS2N3636 | MICROSEMI |
获取价格 |
PNP SILICON AMPLIFIER TRANSISTOR | |
JANS2N3636L | MICROSEMI |
获取价格 |
PNP SILICON AMPLIFIER TRANSISTOR | |
JANS2N3636UB | MICROSEMI |
获取价格 |
Small Signal Bipolar Transistor, 1A I(C), 175V V(BR)CEO, 1-Element, PNP, Silicon, CERAMIC | |
JANS2N3637 | MICROSEMI |
获取价格 |
PNP SILICON AMPLIFIER TRANSISTOR | |
JANS2N3637/TR | MICROSEMI |
获取价格 |
Small Signal Bipolar Transistor, 1A I(C), 175V V(BR)CEO, 1-Element, PNP, Silicon, TO-205AD | |
JANS2N3637L | MICROSEMI |
获取价格 |
PNP SILICON AMPLIFIER TRANSISTOR | |
JANS2N3637UB/TR | MICROSEMI |
获取价格 |
Small Signal Bipolar Transistor, | |
JANS2N3700 | MICROSEMI |
获取价格 |
LOW POWER NPN SILICON TRANSISTOR |