JANS2N3700S

更新时间： 2024-02-05 21:57:49

品牌	Logo	应用领域
美高森美 - MICROSEMI		晶体晶体管
页数	文件大小	规格书
2页	65K
描述
LOW POWER NPN SILICON TRANSISTOR

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中文翻译

获取价格

技术参数
数据手册

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JANS2N3700S 技术参数

是否Rohs认证：	不符合	生命周期：	Active
包装说明：	,	Reach Compliance Code：	compliant
风险等级：	5.76	Base Number Matches：	1

JANS2N3700S 数据手册

TECHNICAL DATA

LOW POWER NPN SILICON TRANSISTOR

Qualified per MIL-PRF-19500/ 391

Devices

2N3019

Qualified Level

JAN

2N3057A

2N3700

2N3019S

2N3700S

JANTX

JANTXV

JANS

MAXIMUM RATINGS

Ratings

Collector-Emitter Voltage

Collector-Base Voltage

Emitter-Base Voltage

Collector Current

Symbol

Value

Units

Vdc

V_CEO

V_CBO

V_EBO

I_C

140

7.0

Vdc

TO-39* (TO-205AD)

2N3019, 2N3019S

Vdc

1.0

Adc

Total Power Dissipation

@ T_A= +25⁰C⁽¹⁾

2N3019; 2N3019S

2N3057A

2N3700

0.8

0.4

0.5

0.4

TO- 18* (TO-206AA)

2N3700

2N3700UB

P_T

@ T_C= +25⁰C⁽²⁾

2N3019; 2N3019S

2N3057A

5.0

1.8

2N3700

2N3700UB

Operating & Storage Jct Temp Range

1.8

1.16

-55 to +175

TO-46* (TO-206AB)

2N3057A

⁰C

T_J_,T

stg

1) Derate linearly 4.6 mW/⁰C for type 2N3019 and 2N3019S; 2.3 mW/⁰C for type 2N3057A;

2.85 mW/⁰C for type 2N3700; 6.6 mW/⁰C for type 2N3700UB for T_A³ +25⁰C.

2) Derate linearly 28.6 mW/⁰C for type 2N3019 and 2N3019S;

3 PIN SURFACE MOUNT*

2N3700UB

10.3 mW/⁰C for types 2N3057A, 2N3700, & 2N3700UB for T_C³ +25⁰C.

*See appendix A for package

outline

ELECTRICAL CHARACTERISTICS (T_A= 25⁰C unless otherwise noted)

Characteristics

Symbol

Min.

Max.

Unit

OFF CHARACTERISTICS

Collector-Base Breakdown Voltage

I_C= 100 mAdc

Emitter-Base Breakdown Voltage

I_E= 100 mAdc

Collector-Emitter Breakdown Current

I_C= 30 mAdc

140

7.0

Vdc

V_(BR)

CBO

V_(BR)

EBO

V_(BR)

CEO

6 Lake Street, Lawrence, MA 01841

1-800-446-1158 / (978) 794-1666 / Fax: (978) 689-0803

120101

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中文翻译

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与JANS2N3700S相关器件

型号	品牌	获取价格	描述	数据表
JANS2N3700UB	ETC	获取价格	TRANSISTOR \| BJT \| NPN \| 80V V(BR)CEO \| 1A I(C)
JANS2N3700UB/TR	MICROSEMI	获取价格	Small Signal Bipolar Transistor,
JANS2N3735	ETC	获取价格	TRANSISTOR \| BJT \| NPN \| 50V V(BR)CEO \| 1.5A I(C) \| TO-5
JANS2N3735L	ETC	获取价格	TRANSISTOR \| BJT \| NPN \| 50V V(BR)CEO \| 1.5A I(C) \| TO-5VAR
JANS2N3737	ETC	获取价格	TRANSISTOR \| BJT \| NPN \| 50V V(BR)CEO \| 1.5A I(C) \| TO-46
JANS2N3737UB	ETC	获取价格	BJT
JANS2N3743	ETC	获取价格	TRANSISTOR \| BJT \| PNP \| 300V V(BR)CEO \| 50MA I(C) \| TO-39
JANS2N3749	MICROSEMI	获取价格	Power Bipolar Transistor, 5A I(C), 80V V(BR)CEO, 1-Element, NPN, Silicon, TO-111, Metal, 3
JANS2N3810	ETC	获取价格	TRANSISTOR \| BJT \| PAIR \| PNP \| 60V V(BR)CEO \| 50MA I(C) \| TO-78
JANS2N3810L	ETC	获取价格	TRANSISTOR \| BJT \| PAIR \| PNP \| 60V V(BR)CEO \| 50MA I(C) \| TO-78