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JANS2N3737 PDF预览

JANS2N3737

更新时间： 2024-02-16 06:10:28
品牌 Logo 应用领域
其他 - ETC 晶体晶体管开关
页数 文件大小 规格书
20页 121K
描述
TRANSISTOR | BJT | NPN | 50V V(BR)CEO | 1.5A I(C) | TO-46

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中文翻译

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JANS2N3737 技术参数

是否Rohs认证： 符合生命周期：Contact Manufacturer
零件包装代码：SOT包装说明：SMALL OUTLINE, R-CDSO-N3
针数：3Reach Compliance Code：compliant
ECCN代码：EAR99HTS代码：8541.21.00.95
风险等级：5.16Is Samacsys：N
最大集电极电流 (IC)：1.5 A集电极-发射极最大电压：40 V
配置：SINGLE最小直流电流增益 (hFE)：20
JESD-30 代码：R-CDSO-N3元件数量：1
端子数量：3最高工作温度：200 °C
封装主体材料：CERAMIC, METAL-SEALED COFIRED封装形状：RECTANGULAR
封装形式：SMALL OUTLINE极性/信道类型：NPN
最大功率耗散 (Abs)：0.5 W认证状态：Qualified
参考标准：MIL-19500/395子类别：Other Transistors
表面贴装：YES端子形式：NO LEAD
端子位置：DUAL晶体管元件材料：SILICON
最大开启时间（吨）：48 nsBase Number Matches：1

JANS2N3737 数据手册

 浏览型号JANS2N3737的Datasheet PDF文件第2页浏览型号JANS2N3737的Datasheet PDF文件第3页浏览型号JANS2N3737的Datasheet PDF文件第4页浏览型号JANS2N3737的Datasheet PDF文件第5页浏览型号JANS2N3737的Datasheet PDF文件第6页浏览型号JANS2N3737的Datasheet PDF文件第7页 
INCH-POUND  
The documentation and process conversion  
measures necessary to comply with this revision  
shall be completed by 6 June 2002.  
MIL-PRF-19500/395G  
6 March 2002  
SUPERSEDING  
MIL-PRF-19500/395F  
26 February 2001  
PERFORMANCE SPECIFICATION  
SEMICONDUCTOR DEVICE, TRANSISTOR, NPN, SILICON, SWITCHING  
TYPES 2N3735, 2N3735L, 2N3737 AND 2N3737UB, JAN, JANTX, JANTXV, JANS AND JANHC, JANKC  
This specification is approved for use by all Departments  
and Agencies of the Department of Defense.  
1. SCOPE  
1.1 Scope. This specification covers the performance requirements for NPN, silicon, switching transistors. Four  
levels of product assurance are provided for each device type as specified in MIL-PRF-19500 and two levels of  
product assurance are provided for unencapsulated devices .  
1.2 Physical dimensions. See figure 1 (TO-39, TO-5 and TO-46), figure 2 (2N3737UB) and figure 3 (JANHC and  
JANKC).  
1.3 Maximum ratings.  
Type  
PT  
TA = +25°C  
W
1.0 (1)  
0.5 (3)  
0.5 (5)  
PT  
TC =+25°C  
W
VCBO VCEO  
VEBO  
IC  
Rq  
Rq  
TJ and  
TSTG  
JC  
JA  
V dc  
75  
V dc  
40  
V dc  
5
5
A dc  
1.5  
1.5  
°C/mW  
.060  
.088  
-
°C/W  
175  
350  
325  
°C  
2N3735  
2N3737  
2N3737UB  
2.9 (2)  
1.9 (4)  
-
-65 to +200  
-65 to +200  
-65 to +200  
75  
40  
75  
40  
5
1.5  
(1) Derate linearly at 5.71 mW/°C above TA = +25°C.  
(2) Derate linearly at 16.6 mW/°C above TC = +25°C.  
(3) Derate linearly at 2.86 mW/°C above TA = +25°C.  
(4) Derate linearly at 11.3 mW/°C above TC = +25°C.  
(5) Derate linearly at 3.07 mW/°C above TA = +37.5°C.  
1.4 Primary electrical characteristics.  
hFE3 (1)  
|hfe|  
VCE(sat)  
Cobo  
Pulse response  
VCE = 1.0 V dc  
IC = 0.5 A dc  
VCE = 10 V dc  
IC = 50 mA dc  
f = 100 MHz  
IC = 500 mA dc  
IB = 50 mA dc  
VCB = 10 V dc  
Limits  
IE = 0  
100 kHz £ f £ 1 MHz  
pF  
td  
ns  
tr  
toff  
ns  
V dc  
0.5  
ns  
40  
Min  
Max  
40  
140  
2.5  
6.0  
9
8.0  
60  
(1) Pulsed (see 4.5.1)  
Beneficial comments (recommendations, additions, deletions) and any pertinent data which may be of use in  
improving this document should be addressed to: Defense Supply Center, Columbus, ATTN: DSCC-VAC,  
P.O. Box 3990, Columbus, OH 43216-5000, by using the Standardization Document Improvement Proposal  
(DD Form 1426) appearing at the end of this document or by letter.  
AMSC N/A  
DISTRIBUTION STATEMENT A. Approved for public release; distribution is unlimited.  
FSC 5961  
1234567...20

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与JANS2N3737相关器件

型号 品牌 获取价格 描述 数据表
JANS2N3737UB ETC

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 		BJT
JANS2N3743 ETC

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 		TRANSISTOR | BJT | PNP | 300V V(BR)CEO | 50MA I(C) | TO-39
JANS2N3749 MICROSEMI

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 		Power Bipolar Transistor, 5A I(C), 80V V(BR)CEO, 1-Element, NPN, Silicon, TO-111, Metal, 3
JANS2N3810 ETC

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 		TRANSISTOR | BJT | PAIR | PNP | 60V V(BR)CEO | 50MA I(C) | TO-78
JANS2N3810L ETC

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 		TRANSISTOR | BJT | PAIR | PNP | 60V V(BR)CEO | 50MA I(C) | TO-78
JANS2N3810U MICROSEMI

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 		Small Signal Bipolar Transistor, 0.05A I(C), 60V V(BR)CEO, 2-Element, PNP, Silicon, TO-78,
JANS2N3811 ETC

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 		TRANSISTOR | BJT | PAIR | PNP | 60V V(BR)CEO | 50MA I(C) | TO-78
JANS2N3811L ETC

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 		TRANSISTOR | BJT | PAIR | PNP | 60V V(BR)CEO | 50MA I(C) | TO-78
JANS2N3811U MICROSEMI

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 		Small Signal Bipolar Transistor, 0.05A I(C), 60V V(BR)CEO, 2-Element, PNP, Silicon, TO-78,
JANS2N3866A ETC

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 		TRANSISTOR | BJT | NPN | 30V V(BR)CEO | 400MA I(C) | TO-39

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