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JANS2N3636L PDF预览

JANS2N3636L

更新时间: 2024-11-08 22:55:35
品牌 Logo 应用领域
美高森美 - MICROSEMI 晶体放大器晶体管开关
页数 文件大小 规格书
2页 61K
描述
PNP SILICON AMPLIFIER TRANSISTOR

JANS2N3636L 数据手册

 浏览型号JANS2N3636L的Datasheet PDF文件第2页 
TECHNICAL DATA  
PNP SILICON AMPLIFIER TRANSISTOR  
Qualified per MIL-PRF-19500/ 357  
Devices  
Qualified Level  
JAN  
2N3634  
2N3635  
2N3636  
2N3637  
JANTX  
2N3634L  
2N3635L  
2N3636L  
2N3637L  
JANTXV  
JANS  
MAXIMUM RATINGS  
Ratings  
2N3634* 2N3636*  
2N3635* 2N3637*  
Symbol  
Unit  
Collector-Emitter Voltage  
Collector-Base Voltage  
Emitter-Base Voltage  
Collector Current  
140  
175  
Vdc  
Vdc  
Vdc  
Adc  
VCEO  
VCBO  
VEBO  
IC  
TO-39* (TO-205AD)  
2N3634, 2N3635  
2N3636, 2N3637  
140  
175  
5.0  
1.0  
Total Power Dissipation  
@ TA = +250C(1)  
@ TC = +250C(2)  
1.0  
5.0  
W
W
0C  
PT  
Operating & Storage Junction Temperature Range  
-65 to +200  
TJ, T  
stg  
*Electrical characteristics for “L” suffix devices are identical to the “non L” corresponding devices  
1) Derate linearly 5.71 mW/0C for TA > +250C  
TO-5*  
2N3634, 2N3635  
2N3636, 2N3637  
2) Derate linearly 28.6 mW/0C for TC > +250C  
*See appendix A for  
package outline  
ELECTRICAL CHARACTERISTICS (TA = 250C unless otherwise noted)  
Characteristics  
Symbol  
Min.  
Max.  
Unit  
OFF CHARACTERISTICS  
Collector-Emitter Breakdown Current  
IC = 10 mAdc  
140  
175  
Vdc  
2N3634, 2N3635  
2N3636, 2N3637  
V(BR)  
CEO  
Collector-Base Cutoff Current  
VCB = 100 Vdc  
VCB = 140 Vdc  
hAdc  
mAdc  
ICBO  
100  
10  
2N3634, 2N3635  
Emitter-Base Cutoff Current  
VEB = 3.0 Vdc  
VEB = 5.0 Vdc  
hAdc  
mAdc  
IEBO  
50  
10  
Collector-Emitter Cutoff Current  
VCE = 100 Vdc  
10  
ICEO  
mAdc  
6 Lake Street, Lawrence, MA 01841  
120101  
1-800-446-1158 / (978) 794-1666 / Fax: (978) 689-0803  
Page 1 of 2  

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