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JANS2N3635UB/TR

更新时间： 2024-09-23 12:58:55

品牌	Logo	应用领域
美高森美 - MICROSEMI		晶体放大器小信号双极晶体管开关
页数	文件大小	规格书
2页	61K
描述
Small Signal Bipolar Transistor,

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中文翻译

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技术参数
数据手册

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JANS2N3635UB/TR 技术参数

是否Rohs认证：	不符合	生命周期：	Active
包装说明：	,	Reach Compliance Code：	compliant
风险等级：	5.75	Base Number Matches：	1

JANS2N3635UB/TR 数据手册

TECHNICAL DATA

PNP SILICON AMPLIFIER TRANSISTOR

Qualified per MIL-PRF-19500/ 357

Devices

Qualified Level

JAN

2N3634

2N3635

2N3636

2N3637

JANTX

2N3634L

2N3635L

2N3636L

2N3637L

JANTXV

JANS

MAXIMUM RATINGS

Ratings

2N3634* 2N3636*

2N3635* 2N3637*

Symbol

Unit

Collector-Emitter Voltage

Collector-Base Voltage

Emitter-Base Voltage

Collector Current

140

175

Vdc

Adc

V_CEO

V_CBO

V_EBO

I_C

TO-39* (TO-205AD)

2N3634, 2N3635

2N3636, 2N3637

140

175

5.0

1.0

Total Power Dissipation

@ T_A= +25⁰C⁽¹⁾

@ T_C= +25⁰C⁽²⁾

1.0

5.0

⁰C

P_T

Operating & Storage Junction Temperature Range

-65 to +200

T_J_,T

stg

*Electrical characteristics for “L” suffix devices are identical to the “non L” corresponding devices

1) Derate linearly 5.71 mW/⁰C for T_A> +25⁰C

TO-5*

2N3634, 2N3635

2N3636, 2N3637

2) Derate linearly 28.6 mW/⁰C for T_C> +25⁰C

*See appendix A for

package outline

ELECTRICAL CHARACTERISTICS (T_A= 25⁰C unless otherwise noted)

Characteristics

Symbol

Min.

Max.

Unit

OFF CHARACTERISTICS

Collector-Emitter Breakdown Current

I_C= 10 mAdc

140

175

Vdc

2N3634, 2N3635

2N3636, 2N3637

V_(BR)

CEO

Collector-Base Cutoff Current

V_CB= 100 Vdc

V_CB= 140 Vdc

hAdc

mAdc

I_CBO

100

2N3634, 2N3635

Emitter-Base Cutoff Current

V_EB= 3.0 Vdc

V_EB= 5.0 Vdc

hAdc

mAdc

I_EBO

Collector-Emitter Cutoff Current

V_CE= 100 Vdc

I_CEO

mAdc

6 Lake Street, Lawrence, MA 01841

120101

1-800-446-1158 / (978) 794-1666 / Fax: (978) 689-0803

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与JANS2N3635UB/TR相关器件

型号	品牌	获取价格	描述	数据表
JANS2N3636	MICROSEMI	获取价格	PNP SILICON AMPLIFIER TRANSISTOR
JANS2N3636L	MICROSEMI	获取价格	PNP SILICON AMPLIFIER TRANSISTOR
JANS2N3636UB	MICROSEMI	获取价格	Small Signal Bipolar Transistor, 1A I(C), 175V V(BR)CEO, 1-Element, PNP, Silicon, CERAMIC
JANS2N3637	MICROSEMI	获取价格	PNP SILICON AMPLIFIER TRANSISTOR
JANS2N3637/TR	MICROSEMI	获取价格	Small Signal Bipolar Transistor, 1A I(C), 175V V(BR)CEO, 1-Element, PNP, Silicon, TO-205AD
JANS2N3637L	MICROSEMI	获取价格	PNP SILICON AMPLIFIER TRANSISTOR
JANS2N3637UB/TR	MICROSEMI	获取价格	Small Signal Bipolar Transistor,
JANS2N3700	MICROSEMI	获取价格	LOW POWER NPN SILICON TRANSISTOR
JANS2N3700S	MICROSEMI	获取价格	LOW POWER NPN SILICON TRANSISTOR
JANS2N3700UB	ETC	获取价格	TRANSISTOR \| BJT \| NPN \| 80V V(BR)CEO \| 1A I(C)