Datasheet > JAN2N2604

JAN2N2604

更新时间： 2024-09-12 23:59:59

品牌	Logo	应用领域
其他 - ETC		晶体晶体管放大器
页数	文件大小	规格书
17页	75K
描述
TRANSISTOR \| BJT \| PNP \| 45V V(BR)CEO \| 30MA I(C) \| TO-46

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JAN2N2604 数据手册

The documentation and process conversion measures necessary to

comply with this document shall be completed by 5 April 2002.

INCH-POUND

MIL-PRF-19500/354H

5 March 2002

SUPERSEDING

MIL-PRF-19500/354G

23 April 2001

PERFORMANCE SPECIFICATION

SEMICONDUCTOR DEVICE, TRANSISTOR, PNP, SILICON, LOW-POWER

TYPES 2N2604, 2N2604UB, 2N2605 AND 2N2605UB

JAN, JANTX, JANTXV, AND JANS, JANHC, JANKC

This specification is approved for use by all Departments

and Agencies of the Department of Defense.

1. SCOPE

1.1 Scope. This specification covers the performance requirements for PNP, silicon, low-power transistors for use

in low noise-level amplifier applications. Four levels of product assurance are provided for each encapsulated

device type and two levels for each unencapsulated device type as specified in MIL-PRF-19500.

1.2 Physical dimensions. See figure 1 (TO-46), figure 2 (UB), and figures 3 and 4 die.

1.3 Maximum ratings.

Type

P_T(1)

T_A= +25°C

V_CBO

V_EBO

V_CEO

I_C

T_Jand T_STG

θJA

V dc

mA dc

°C

°C/W

437

2N2604, UB

2N2605, UB

400

-65 to +200

(1)Derate linearly at 2.28 mW/°C above T_A= +25°C.

1.4 Primary electrical characteristics.

h_FE1

h_fe

|h_fe|

C_obo

V_BE(sat)

V_CE(sat)

_CE=5 V dc

V_CE=5 V dc

V_CB=5 V dc

I_C=10 mA dc

I_C=10 mA

I_B=500 µA

I_C=10 µ dc

I_C=1 mA dc

f=1 kHz

I_C=500 µA dc

f=30 MHz

I_E=0

100 kHz ≤ f ≤

1 MHz

I_B=500 µA

2N2604 2N2605 2N2604 2N2605

V dc

0.7

0.9

V dc

0.3

Min

Max

100

300

150

450

120

180

Beneficial comments (recommendations, additions, deletions) and any pertinent data which may be of use in

improving this document should be addressed to: Defense Supply Center Columbus, ATTN: DSCC-VAC,

P.O. Box 3990, Columbus, OH 43216-5000, by using the Standardization Document Improvement Proposal

(DD Form 1426) appearing at the end of this document or by letter.

AMSC N/A

FSC 5961

DISTRIBUTION STATEMENT A. Approved for public release; distribution is unlimited.

12 3 4 5 6 7...17

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与JAN2N2604相关器件

型号	品牌	获取价格	描述	数据表
JAN2N2604A	MICROSEMI	获取价格	Small Signal Bipolar Transistor, 0.6A I(C), 60V V(BR)CEO, 1-Element, PNP, Silicon, TO-39,
JAN2N2604UB	MICROSEMI	获取价格	Small Signal Bipolar Transistor, 0.03A I(C), 60V V(BR)CEO, 1-Element, PNP, Silicon, CERAMI
JAN2N2605	RAYTHEON	获取价格	Small Signal Bipolar Transistor, 1-Element, PNP, Silicon, TO-46,
JAN2N2605UB	MICROSEMI	获取价格	Small Signal Bipolar Transistor, 0.03A I(C), 60V V(BR)CEO, 1-Element, PNP, Silicon, CERAMI
JAN2N2608	MICROSEMI	获取价格	P-CHANNEL J-FET
JAN2N2608UB	MICROSEMI	获取价格	Small Signal Field-Effect Transistor, 1-Element, P-Channel, Silicon, Junction FET, SURFACE
JAN2N2609	MICROSEMI	获取价格	P-CHANNEL J-FET
JAN2N2708	MICROSEMI	获取价格	Small Signal Bipolar Transistor, 0.05A I(C), 20V V(BR)CEO, 1-Element, NPN, Silicon, TO-72,
JAN2N2812	ETC	获取价格	TRANSISTOR \| BJT \| NPN \| 60V V(BR)CEO \| 10A I(C) \| STR-1/4
JAN2N2814	ETC	获取价格	TRANSISTOR \| BJT \| NPN \| 80V V(BR)CEO \| 10A I(C) \| STR-1/4