是否无铅: | 含铅 | 是否Rohs认证: | 不符合 |
生命周期: | Obsolete | 零件包装代码: | BCY |
包装说明: | CYLINDRICAL, O-MBCY-W3 | 针数: | 3 |
Reach Compliance Code: | not_compliant | HTS代码: | 8541.21.00.95 |
风险等级: | 5.14 | Is Samacsys: | N |
配置: | SINGLE | FET 技术: | JUNCTION |
JEDEC-95代码: | TO-206AA | JESD-30 代码: | O-MBCY-W3 |
JESD-609代码: | e0 | 元件数量: | 1 |
端子数量: | 3 | 工作模式: | DEPLETION MODE |
封装主体材料: | METAL | 封装形状: | ROUND |
封装形式: | CYLINDRICAL | 峰值回流温度(摄氏度): | NOT SPECIFIED |
极性/信道类型: | P-CHANNEL | 认证状态: | Not Qualified |
参考标准: | MIL-19500/296 | 表面贴装: | NO |
端子面层: | Tin/Lead (Sn/Pb) | 端子形式: | WIRE |
端子位置: | BOTTOM | 处于峰值回流温度下的最长时间: | NOT SPECIFIED |
晶体管应用: | SWITCHING | 晶体管元件材料: | SILICON |
Base Number Matches: | 1 |
型号 | 品牌 | 获取价格 | 描述 | 数据表 |
JAN2N2708 | MICROSEMI |
获取价格 |
Small Signal Bipolar Transistor, 0.05A I(C), 20V V(BR)CEO, 1-Element, NPN, Silicon, TO-72, | |
JAN2N2812 | ETC |
获取价格 |
TRANSISTOR | BJT | NPN | 60V V(BR)CEO | 10A I(C) | STR-1/4 | |
JAN2N2814 | ETC |
获取价格 |
TRANSISTOR | BJT | NPN | 80V V(BR)CEO | 10A I(C) | STR-1/4 | |
JAN2N2857 | ETC |
获取价格 |
TRANSISTOR | BJT | NPN | 15V V(BR)CEO | 40MA I(C) | TO-72 | |
JAN2N2857UB | MICROSEMI |
获取价格 |
RF Small Signal Bipolar Transistor, 0.04A I(C), 1-Element, Ultra High Frequency Band, Sili | |
JAN2N2880 | APITECH |
获取价格 |
Power Bipolar Transistor, 5A I(C), 80V V(BR)CEO, 1-Element, NPN, Silicon, TO-111, Metal, 3 | |
JAN2N2880 | MICROSEMI |
获取价格 |
PNP POWER SILICON TRANSISTOR | |
JAN2N2904 | MICROSEMI |
获取价格 |
PNP SWITCHING SILICON TRANSISTOR | |
JAN2N2904A | MICROSEMI |
获取价格 |
PNP SWITCHING SILICON TRANSISTOR | |
JAN2N2904AL | MICROSEMI |
获取价格 |
PNP SWITCHING SILICON TRANSISTOR |