Datasheet > JAN2N2919L

JAN2N2919L

更新时间： 2024-11-02 20:33:27

品牌	Logo	应用领域
雷神 - RAYTHEON		晶体管
页数	文件大小	规格书
20页	229K
描述
Small Signal Bipolar Transistor, 0.03A I(C), 60V V(BR)CEO, 2-Element, NPN, Silicon, SIMILAR TO TO-78, 6 PIN

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JAN2N2919L 技术参数

生命周期：	Obsolete	包装说明：	SIMILAR TO TO-78, 6 PIN
Reach Compliance Code：	unknown	风险等级：	5.76
Is Samacsys：	N	最大集电极电流 (IC)：	0.03 A
集电极-发射极最大电压：	60 V	配置：	SEPARATE, 2 ELEMENTS
最小直流电流增益 (hFE)：	150	JESD-30 代码：	O-MBCY-W6
元件数量：	2	端子数量：	6
封装主体材料：	METAL	封装形状：	ROUND
封装形式：	CYLINDRICAL	极性/信道类型：	NPN
认证状态：	Not Qualified	参考标准：	MIL-19500/355J
表面贴装：	NO	端子形式：	WIRE
端子位置：	BOTTOM	晶体管元件材料：	SILICON
Base Number Matches：	1

JAN2N2919L 数据手册

The documentation and process conversion measures

necessary to comply with this document shall be

completed by 16 June 2007.

INCH-POUND

MIL-PRF-19500/355M

16 March 2007

SUPERSEDING

MIL-PRF-19500/355L

2 June 2006

PERFORMANCE SPECIFICATION SHEET

SEMICONDUCTOR DEVICE, UNITIZED DUAL TRANSISTOR, NPN, SILICON,

TYPES 2N2919, 2N2920, 2N2919L, 2N2920L, 2N2919U, AND 2N2920U,

JAN, JANTX, JANTXV, JANS, JANHC, AND JANKC

This specification is approved for use by all Departments

and Agencies of the Department of Defense.

The requirements for acquiring the product described herein shall consist of

this specification sheet and MIL-PRF-19500.

1. SCOPE

1.1 Scope. This specification covers the performance requirements for two electrically isolated, matched NPN

silicon transistors as one dual unit. Four levels of product assurance are provided for each device type as specified

in MIL-PRF-19500. Two levels of product assurance are provided for die.

1.2 Physical dimensions. See figure 1 (similar to TO-78), figure 2 (surface mount), figure 3 (JANHCA and

JANKCA die), figure 4 (JANHCB and JANKCB die).

1.3 Maximum ratings. Unless otherwise specified, T_C=+25°C.

Type

EBO

CBO

CEO

mA dc

V dc

All types

P (1)

P (2)

θJA

θJC

T_Jand T_STG

= +25°C

One

section

Both

sections

One

section

Both

sections

One

section

Both

sections

One

section

Both

sections

200

°C/W

°C

350

300

450

875

500

583

350

-65 to +200

(1) For T_A> +25°C, derate linearly 1.143 mW/°C, one section; 2.000 mW/°C, both sections.

(2) For T_C> +25°C, derate linearly 1.714 mW/°C, one section; 2.571 mW/°C, both sections.

Comments, suggestions, or questions on this document should be addressed to Defense Supply Center, Columbus,

ATTN: DSCC-VAC, P.O. Box 3990, Columbus, OH 43218-3990, or emailed to Semiconductor@dscc.dla.mil.

Since contact information can change, you may want to verify the currency of this address information using the

ASSIST Online database at http://assist.daps.dla.mil .

AMSC N/A

FSC 5961

12 3 4 5 6 7...20

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与JAN2N2919L相关器件

型号	品牌	获取价格	描述	数据表
JAN2N2919U	ETC	获取价格	BJT
JAN2N2920	RAYTHEON	获取价格	Small Signal Bipolar Transistor, 1-Element, NPN, Silicon, TO-77,
JAN2N2920L	MICROSEMI	获取价格	Small Signal Bipolar Transistor, 0.03A I(C), 60V V(BR)CEO, 2-Element, NPN, Silicon, TO-78,
JAN2N2920L	RAYTHEON	获取价格	Small Signal Bipolar Transistor, 0.03A I(C), 60V V(BR)CEO, 2-Element, NPN, Silicon, SIMILA
JAN2N2920U	ETC	获取价格	BJT
JAN2N2944A	MICROSEMI	获取价格	PNP SILICON SMALL SIGNAL TRANSISTOR
JAN2N2944AUB	MICROSEMI	获取价格	Small Signal Bipolar Transistor, 0.1A I(C), PNP,
JAN2N2945A	RAYTHEON	获取价格	Small Signal Bipolar Transistor, 1-Element, PNP, Silicon, TO-46,
JAN2N2945A	MICROSEMI	获取价格	PNP SILICON SMALL SIGNAL TRANSISTOR
JAN2N2945AUB	MICROSEMI	获取价格	Small Signal Bipolar Transistor, 0.1A I(C), PNP,

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