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JAN2N2904 PDF预览

JAN2N2904

更新时间: 2024-11-28 22:29:27
品牌 Logo 应用领域
美高森美 - MICROSEMI 晶体开关晶体管
页数 文件大小 规格书
2页 60K
描述
PNP SWITCHING SILICON TRANSISTOR

JAN2N2904 数据手册

 浏览型号JAN2N2904的Datasheet PDF文件第2页 
TECHNICAL DATA  
PNP SWITCHING SILICON TRANSISTOR  
Qualified per MIL-PRF-19500/ 290  
Devices  
Qualified Level  
JAN  
2N2904  
2N2904A  
2N2904AL  
2N2905  
2N2905A  
2N2905AL  
JANTX  
JANTXV  
JANS  
MAXIMUM RATINGS  
2N2904 2N2904A, L  
Symbol 2N2905 2N2905A, L Unit  
Ratings  
Collector-Emitter Voltage  
Collector-Base Voltage  
Emitter-Base Voltage  
Collector Current  
40  
60  
Vdc  
VCEO  
VCBO  
VEBO  
IC  
60  
5.0  
600  
Vdc  
TO-39* (TO-205AD)  
2N2904, 2N2904A  
2N2905, 2N2905A  
Vdc  
mAdc  
Total Power Dissipation @ TA = +250C (1)  
0.6  
3.0  
W
W
0C  
PT  
@ TC = +250C (2)  
Operating & Storage Junction Temp. Range  
-65 to +200  
TJ, T  
stg  
THERMAL CHARACTERISTICS  
Characteristics  
Symbol  
Max.  
Unit  
0C/mW  
Thermal Resistance, Junction-to-Case  
0.29  
R
qJC  
TO-5*  
2N2904AL, 2N2905AL  
1) Derate linearly 3.43 W/0C for TA > +250C  
2) Derate linearly 17.2 W/0C for TC > +250C  
*See appendix A for  
package outline  
ELECTRICAL CHARACTERISTICS (TA = +250C unless otherwise noted)  
Characteristics  
OFF CHARACTERISTICS  
Symbol  
Min.  
Max.  
Unit  
Vdc  
Collector-Emitter Breakdown Voltage  
IC = 10 mAdc  
2N2904, 2N2905  
V(BR)  
40  
60  
CEO  
2N2904A, L, 2N2905A, L  
Collector-Emitter Cutoff Voltage  
VCE = 40 Vdc  
VCE = 60 Vdc  
ICES  
2N2904, 2N2905  
2N2904A, L, 2N2905A, L  
mAdc  
1.0  
1.0  
Collector-Base Cutoff Current  
VCB = 50 Vdc  
2N2904, 2N2905  
2N2904A, L, 2N2905A, L  
All Types  
20  
10  
10  
hAdc  
mAdc  
ICBO  
VCB = 60 Vdc  
Emitter-Base Cutoff Current  
VEB = 3.5 Vdc  
VEB = 5.0 Vdc  
hAdc  
mAdc  
IEBO  
50  
10  
6 Lake Street, Lawrence, MA 01841  
120101  
1-800-446-1158 / (978) 794-1666 / Fax: (978) 689-0803  
Page 1 of 2  

JAN2N2904 替代型号

型号 品牌 替代类型 描述 数据表
JANS2N2904 MICROSEMI

完全替代

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2N2904 MICROSEMI

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JANTXV2N2904 MICROSEMI

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