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2N2904 PDF预览

2N2904

更新时间: 2024-11-29 22:35:51
品牌 Logo 应用领域
美高森美 - MICROSEMI 晶体开关晶体管
页数 文件大小 规格书
2页 60K
描述
PNP SWITCHING SILICON TRANSISTOR

2N2904 技术参数

是否无铅: 含铅是否Rohs认证: 不符合
生命周期:Active包装说明:CYLINDRICAL, O-MBCY-W3
Reach Compliance Code:compliantECCN代码:EAR99
HTS代码:8541.21.00.75风险等级:5.08
最大集电极电流 (IC):0.6 A集电极-发射极最大电压:40 V
配置:SINGLE最小直流电流增益 (hFE):20
JEDEC-95代码:TO-205ADJESD-30 代码:O-MBCY-W3
JESD-609代码:e0元件数量:1
端子数量:3最高工作温度:200 °C
封装主体材料:METAL封装形状:ROUND
封装形式:CYLINDRICAL峰值回流温度(摄氏度):NOT SPECIFIED
极性/信道类型:PNP最大功率耗散 (Abs):3 W
认证状态:Not Qualified子类别:Other Transistors
表面贴装:NO端子面层:TIN LEAD
端子形式:WIRE端子位置:BOTTOM
处于峰值回流温度下的最长时间:NOT SPECIFIED晶体管应用:SWITCHING
晶体管元件材料:SILICON标称过渡频率 (fT):200 MHz
最大关闭时间(toff):300 ns最大开启时间(吨):45 ns
Base Number Matches:1

2N2904 数据手册

 浏览型号2N2904的Datasheet PDF文件第2页 
TECHNICAL DATA  
PNP SWITCHING SILICON TRANSISTOR  
Qualified per MIL-PRF-19500/ 290  
Devices  
Qualified Level  
JAN  
2N2904  
2N2904A  
2N2904AL  
2N2905  
2N2905A  
2N2905AL  
JANTX  
JANTXV  
JANS  
MAXIMUM RATINGS  
2N2904 2N2904A, L  
Symbol 2N2905 2N2905A, L Unit  
Ratings  
Collector-Emitter Voltage  
Collector-Base Voltage  
Emitter-Base Voltage  
Collector Current  
40  
60  
Vdc  
VCEO  
VCBO  
VEBO  
IC  
60  
5.0  
600  
Vdc  
TO-39* (TO-205AD)  
2N2904, 2N2904A  
2N2905, 2N2905A  
Vdc  
mAdc  
Total Power Dissipation @ TA = +250C (1)  
0.6  
3.0  
W
W
0C  
PT  
@ TC = +250C (2)  
Operating & Storage Junction Temp. Range  
-65 to +200  
TJ, T  
stg  
THERMAL CHARACTERISTICS  
Characteristics  
Symbol  
Max.  
Unit  
0C/mW  
Thermal Resistance, Junction-to-Case  
0.29  
R
qJC  
TO-5*  
2N2904AL, 2N2905AL  
1) Derate linearly 3.43 W/0C for TA > +250C  
2) Derate linearly 17.2 W/0C for TC > +250C  
*See appendix A for  
package outline  
ELECTRICAL CHARACTERISTICS (TA = +250C unless otherwise noted)  
Characteristics  
OFF CHARACTERISTICS  
Symbol  
Min.  
Max.  
Unit  
Vdc  
Collector-Emitter Breakdown Voltage  
IC = 10 mAdc  
2N2904, 2N2905  
V(BR)  
40  
60  
CEO  
2N2904A, L, 2N2905A, L  
Collector-Emitter Cutoff Voltage  
VCE = 40 Vdc  
VCE = 60 Vdc  
ICES  
2N2904, 2N2905  
2N2904A, L, 2N2905A, L  
mAdc  
1.0  
1.0  
Collector-Base Cutoff Current  
VCB = 50 Vdc  
2N2904, 2N2905  
2N2904A, L, 2N2905A, L  
All Types  
20  
10  
10  
hAdc  
mAdc  
ICBO  
VCB = 60 Vdc  
Emitter-Base Cutoff Current  
VEB = 3.5 Vdc  
VEB = 5.0 Vdc  
hAdc  
mAdc  
IEBO  
50  
10  
6 Lake Street, Lawrence, MA 01841  
120101  
1-800-446-1158 / (978) 794-1666 / Fax: (978) 689-0803  
Page 1 of 2  

2N2904 替代型号

型号 品牌 替代类型 描述 数据表
JAN2N2904 MICROSEMI

完全替代

PNP SWITCHING SILICON TRANSISTOR

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