是否无铅: | 含铅 | 是否Rohs认证: | 不符合 |
生命周期: | Active | 包装说明: | CYLINDRICAL, O-MBCY-W3 |
Reach Compliance Code: | compliant | ECCN代码: | EAR99 |
HTS代码: | 8541.21.00.75 | 风险等级: | 5.05 |
Is Samacsys: | N | 最大集电极电流 (IC): | 0.6 A |
集电极-发射极最大电压: | 60 V | 配置: | SINGLE |
最小直流电流增益 (hFE): | 40 | JEDEC-95代码: | TO-205AD |
JESD-30 代码: | O-MBCY-W3 | JESD-609代码: | e0 |
元件数量: | 1 | 端子数量: | 3 |
最高工作温度: | 200 °C | 封装主体材料: | METAL |
封装形状: | ROUND | 封装形式: | CYLINDRICAL |
峰值回流温度(摄氏度): | NOT SPECIFIED | 极性/信道类型: | PNP |
最大功率耗散 (Abs): | 3 W | 认证状态: | Not Qualified |
子类别: | Other Transistors | 表面贴装: | NO |
端子面层: | TIN LEAD | 端子形式: | WIRE |
端子位置: | BOTTOM | 处于峰值回流温度下的最长时间: | NOT SPECIFIED |
晶体管应用: | SWITCHING | 晶体管元件材料: | SILICON |
标称过渡频率 (fT): | 200 MHz | 最大关闭时间(toff): | 300 ns |
最大开启时间(吨): | 45 ns | Base Number Matches: | 1 |
型号 | 品牌 | 替代类型 | 描述 | 数据表 |
JANTXV2N2904A | MICROSEMI |
完全替代 |
PNP SWITCHING SILICON TRANSISTOR | |
JAN2N2904AL | MICROSEMI |
类似代替 |
PNP SWITCHING SILICON TRANSISTOR | |
JANS2N2904AL | MICROSEMI |
功能相似 |
PNP SWITCHING SILICON TRANSISTOR |
型号 | 品牌 | 获取价格 | 描述 | 数据表 |
2N2904A_02 | SEMICOA |
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2N2904AJ.TX.V | RAYTHEON |
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Small Signal Bipolar Transistor, 0.6A I(C), 60V V(BR)CEO, 1-Element, PNP, Silicon, TO-39, | |
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2N2904DCSM | SEME-LAB |
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2N2904E | KEC |
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EPITAXIAL PLANAR NPN TRANSISTOR (GENERAL PURPOSE, SWITCHING) |