是否无铅: | 不含铅 | 是否Rohs认证: | 符合 |
生命周期: | Active | 零件包装代码: | TO-39 |
包装说明: | CYLINDRICAL, O-MBCY-W3 | 针数: | 3 |
Reach Compliance Code: | compliant | ECCN代码: | EAR99 |
HTS代码: | 8541.21.00.75 | 风险等级: | 5.06 |
最大集电极电流 (IC): | 0.6 A | 集电极-发射极最大电压: | 60 V |
配置: | SINGLE | 最小直流电流增益 (hFE): | 40 |
JEDEC-95代码: | TO-39 | JESD-30 代码: | O-MBCY-W3 |
JESD-609代码: | e3 | 元件数量: | 1 |
端子数量: | 3 | 封装主体材料: | METAL |
封装形状: | ROUND | 封装形式: | CYLINDRICAL |
峰值回流温度(摄氏度): | 260 | 极性/信道类型: | PNP |
认证状态: | Not Qualified | 表面贴装: | NO |
端子面层: | Matte Tin (Sn) | 端子形式: | WIRE |
端子位置: | BOTTOM | 处于峰值回流温度下的最长时间: | 10 |
晶体管应用: | SWITCHING | 晶体管元件材料: | SILICON |
标称过渡频率 (fT): | 200 MHz | 最大关闭时间(toff): | 180 ns |
最大开启时间(吨): | 45 ns | Base Number Matches: | 1 |
型号 | 品牌 | 获取价格 | 描述 | 数据表 |
2N2904AUB | SEMICOA |
获取价格 |
Chip Type 2C2904A Geometry 0600 Polarity PNP | |
2N2904CSM | SEME-LAB |
获取价格 |
Bipolar PNP Device in a Hermetically sealed LCC1 | |
2N2904DCSM | SEME-LAB |
获取价格 |
Dual Bipolar PNP Devices in a hermetically sealed | |
2N2904E | KEC |
获取价格 |
EPITAXIAL PLANAR NPN TRANSISTOR (GENERAL PURPOSE, SWITCHING) | |
2N2904E_08 | KEC |
获取价格 |
Laser Marking | |
2N2904E3 | MICROSEMI |
获取价格 |
Small Signal Bipolar Transistor, 0.6A I(C), 40V V(BR)CEO, 1-Element, PNP, Silicon, TO-205A | |
2N2904J | RAYTHEON |
获取价格 |
Silicon PNP Transistor | |
2N2904J.TX.V | RAYTHEON |
获取价格 |
Medium Current General Purpose Amplifiers and Switches | |
2N2904JV | RAYTHEON |
获取价格 |
Silicon PNP Transistor | |
2N2904JX | RAYTHEON |
获取价格 |
Silicon PNP Transistor |