5秒后页面跳转
2N2904ALEADFREE PDF预览

2N2904ALEADFREE

更新时间: 2024-11-30 20:04:11
品牌 Logo 应用领域
CENTRAL 开关晶体管
页数 文件大小 规格书
2页 502K
描述
Small Signal Bipolar Transistor, 0.6A I(C), 60V V(BR)CEO, 1-Element, PNP, Silicon, TO-39, TO-39, 3 PIN

2N2904ALEADFREE 技术参数

是否无铅: 不含铅是否Rohs认证: 符合
生命周期:Active零件包装代码:TO-39
包装说明:CYLINDRICAL, O-MBCY-W3针数:3
Reach Compliance Code:compliantECCN代码:EAR99
HTS代码:8541.21.00.75风险等级:5.06
最大集电极电流 (IC):0.6 A集电极-发射极最大电压:60 V
配置:SINGLE最小直流电流增益 (hFE):40
JEDEC-95代码:TO-39JESD-30 代码:O-MBCY-W3
JESD-609代码:e3元件数量:1
端子数量:3封装主体材料:METAL
封装形状:ROUND封装形式:CYLINDRICAL
峰值回流温度(摄氏度):260极性/信道类型:PNP
认证状态:Not Qualified表面贴装:NO
端子面层:Matte Tin (Sn)端子形式:WIRE
端子位置:BOTTOM处于峰值回流温度下的最长时间:10
晶体管应用:SWITCHING晶体管元件材料:SILICON
标称过渡频率 (fT):200 MHz最大关闭时间(toff):180 ns
最大开启时间(吨):45 nsBase Number Matches:1

2N2904ALEADFREE 数据手册

 浏览型号2N2904ALEADFREE的Datasheet PDF文件第2页 
2N2904 2N2904A  
2N2905 2N2905A  
www.centralsemi.com  
DESCRIPTION:  
PNP SILICON TRANSISTOR  
The CENTRAL SEMICONDUCTOR 2N2904, 2N2905  
series types are PNP silicon transistors manufactured  
by the epitaxial planar process, designed for small  
signal, general purpose and switching applications.  
MARKING: FULL PART NUMBER  
TO-39 CASE  
MAXIMUM RATINGS: (T =25°C unless otherwise noted)  
2N2904  
2N2905  
60  
2N2904A  
2N2905A  
60  
A
SYMBOL  
UNITS  
V
Collector-Base Voltage  
Collector-Emitter Voltage  
Emitter-Base Voltage  
Continuous Collector Current  
Power Dissipation  
V
CBO  
CEO  
EBO  
V
V
40  
60  
V
V
5.0  
0.6  
0.6  
3.0  
I
A
C
P
W
W
°C  
D
D
Power Dissipation (T =25°C)  
P
C
Operating and Storage Junction Temperature  
T , T  
-65 to +200  
J
stg  
2N2904  
2N2905  
ELECTRICAL CHARACTERISTICS: (T =25°C)  
A
SYMBOL  
TEST CONDITIONS  
MIN  
MAX  
UNITS  
I
V
=50V  
-
20  
-
10  
nA  
CBO  
CEV  
CB  
CE  
I
V
=30V, VEB=0.5V  
-
-
-
-
50  
-
nA  
V
BV  
BV  
BV  
I =10μA  
60  
40  
5.0  
-
60  
60  
5.0  
-
CBO  
C
I =10mA  
-
-
V
CEO  
C
I =10μA  
-
-
V
EBO  
E
V
V
V
V
I =150mA, I =15mA  
0.4  
1.6  
1.3  
2.6  
0.4  
1.6  
1.3  
2.6  
V
CE(SAT)  
CE(SAT)  
BE(SAT)  
BE(SAT)  
C
B
I =500mA, I =50mA  
-
-
V
C
B
I =150mA, I =15mA  
-
-
V
C
B
I =500mA, I =50mA  
-
-
V
C
B
2N2904  
2N2904A  
2N2905  
2N2905A  
MIN MAX  
MIN  
20  
=10V, I =100μA (2N2904A, 2N2905A) 40  
MAX  
-
h
h
h
h
h
h
h
h
h
V
=10V, I =100μA (2N2904, 2N2905)  
35  
-
FE  
FE  
FE  
FE  
FE  
FE  
FE  
FE  
FE  
CE  
CE  
CE  
CE  
CE  
CE  
CE  
CE  
CE  
C
V
V
V
V
V
V
V
V
-
75  
-
C
=10V, I =1.0mA (2N2904, 2N2905)  
25  
-
50  
-
C
=10V, I =1.0mA (2N2904A, 2N2905A) 40  
-
100  
75  
-
C
=10V, I =10mA (2N2904, 2N2905)  
35  
-
-
C
=10V, I =10mA (2N2904A, 2N2905A) 40  
-
100  
100  
30  
-
C
=10V, I =150mA  
40  
20  
120  
300  
C
=10V, I =500mA (2N2904, 2N2905)  
-
-
-
-
C
=10V, I =500mA (2N2904A, 2N2905A) 40  
50  
C
R1 (11-June 2012)  

与2N2904ALEADFREE相关器件

型号 品牌 获取价格 描述 数据表
2N2904AUB SEMICOA

获取价格

Chip Type 2C2904A Geometry 0600 Polarity PNP
2N2904CSM SEME-LAB

获取价格

Bipolar PNP Device in a Hermetically sealed LCC1
2N2904DCSM SEME-LAB

获取价格

Dual Bipolar PNP Devices in a hermetically sealed
2N2904E KEC

获取价格

EPITAXIAL PLANAR NPN TRANSISTOR (GENERAL PURPOSE, SWITCHING)
2N2904E_08 KEC

获取价格

Laser Marking
2N2904E3 MICROSEMI

获取价格

Small Signal Bipolar Transistor, 0.6A I(C), 40V V(BR)CEO, 1-Element, PNP, Silicon, TO-205A
2N2904J RAYTHEON

获取价格

Silicon PNP Transistor
2N2904J.TX.V RAYTHEON

获取价格

Medium Current General Purpose Amplifiers and Switches
2N2904JV RAYTHEON

获取价格

Silicon PNP Transistor
2N2904JX RAYTHEON

获取价格

Silicon PNP Transistor