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2N2905 PDF预览

2N2905

更新时间: 2024-11-18 05:56:11
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页数 文件大小 规格书
3页 191K
描述
SILICON PLANAR EPITAXIAL TRANSISTORS

2N2905 数据手册

 浏览型号2N2905的Datasheet PDF文件第2页浏览型号2N2905的Datasheet PDF文件第3页 
PNP 2N2905 – 2N2905A  
SILICON PLANAR EPITAXIAL TRANSISTORS  
The 2N2905 and 2N2905A are PNP transistors mounted in TO-39 metal case .  
They are intended for high speed switching and general purpose applications.  
Compliance to RoHS  
ABSOLUTE MAXIMUM RATINGS  
Symbol  
Ratings  
Value  
Unit  
2N2905A  
2N2905  
2N2905A  
2N2905  
-60  
-40  
-60  
-60  
-5  
Collector-Emitter Voltage  
Collector-Base Voltage  
VCEO  
V
VCBO  
V
V
2N2905A  
Emitter-Base Voltage  
Collector Current  
VEBO  
IC  
2N2905  
2N2905A  
2N2905  
2N2905A  
2N2905  
2N2905A  
2N2905  
-5  
-600  
0.6  
3
mA  
Total Power Dissipation  
Total Power Dissipation  
Junction Temperature  
@ Tamb = 25°  
@ Tcase= 25°  
PD  
PD  
TJ  
Watts  
2N2905A  
200  
°C  
°C  
2N2905  
2N2905A  
2N2905  
Storage Temperature range  
TStg  
-65 to +200  
THERMAL CHARACTERISTICS  
Symbol  
Ratings  
Value  
Unit  
Thermal Resistance, Junction to ambient in  
free air  
2N2905A  
2N2905  
2N2905A  
2N2905  
RthJ-a  
RthJ-c  
58.3  
°C/W  
Thermal Resistance, Junction to case  
292  
°C/W  
ELECTRICAL CHARACTERISTICS  
COMSET SEMICONDUCTORS  
1/3  

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