是否Rohs认证: | 不符合 | 生命周期: | Obsolete |
包装说明: | CYLINDRICAL, O-MBCY-W3 | Reach Compliance Code: | compliant |
风险等级: | 5.67 | 最大集电极电流 (IC): | 0.6 A |
集电极-发射极最大电压: | 60 V | 配置: | SINGLE |
最小直流电流增益 (hFE): | 50 | JEDEC-95代码: | TO-205AD |
JESD-30 代码: | O-MBCY-W3 | 元件数量: | 1 |
端子数量: | 3 | 封装主体材料: | METAL |
封装形状: | ROUND | 封装形式: | CYLINDRICAL |
极性/信道类型: | PNP | 表面贴装: | NO |
端子形式: | WIRE | 端子位置: | BOTTOM |
晶体管应用: | SWITCHING | 晶体管元件材料: | SILICON |
标称过渡频率 (fT): | 200 MHz | 最大关闭时间(toff): | 300 ns |
最大开启时间(吨): | 45 ns |
型号 | 品牌 | 获取价格 | 描述 | 数据表 |
2N2905A_02 | SEME-LAB |
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HIGH SPEED MEDIUM POWER PNP SWITCHING TRANSISTOR | |
2N2905A_02 | STMICROELECTRONICS |
获取价格 |
Silicon PNP Transistor | |
2N2905ACSM | SEME-LAB |
获取价格 |
SILICON PLANAR EPITAXIAL PNP TRANSISTOR | |
2N2905ADIE | MICROSEMI |
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Small Signal Bipolar Transistor, 0.6A I(C), 60V V(BR)CEO, 1-Element, PNP, Silicon, TO-39, | |
2N2905AHR | STMICROELECTRONICS |
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Hi-Rel PNP bipolar transistor 60 V, 0.6 A | |
2N2905AJ.TX.V | RAYTHEON |
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Medium Current General Purpose Amplifiers and Switches | |
2N2905AL | SEMICOA |
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Type 2N2905AL Geometry 0600 Polarity PNP | |
2N2905AL | MICROSEMI |
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PNP SWITCHING SILICON TRANSISTOR | |
2N2905AL | SEME-LAB |
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Bipolar PNP Device in a Hermetically sealed TO5 | |
2N2905AL | NJSEMI |
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Trans GP BJT PNP 60V 0.6A 3-Pin TO-5 |