是否Rohs认证: | 不符合 | 生命周期: | Active |
Reach Compliance Code: | unknown | 风险等级: | 5.78 |
最大集电极电流 (IC): | 0.6 A | 集电极-发射极最大电压: | 40 V |
配置: | SINGLE | 最小直流电流增益 (hFE): | 40 |
JEDEC-95代码: | TO-18 | JESD-30 代码: | O-MBCY-W3 |
JESD-609代码: | e0 | 元件数量: | 1 |
端子数量: | 3 | 封装主体材料: | METAL |
封装形状: | ROUND | 封装形式: | CYLINDRICAL |
极性/信道类型: | PNP | 表面贴装: | NO |
端子面层: | Tin/Lead (Sn/Pb) | 端子形式: | WIRE |
端子位置: | BOTTOM | 晶体管应用: | SWITCHING |
晶体管元件材料: | SILICON | 标称过渡频率 (fT): | 200 MHz |
最大关闭时间(toff): | 175 ns | Base Number Matches: | 1 |
型号 | 品牌 | 获取价格 | 描述 | 数据表 |
2N2906/A | ETC |
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PNP Switching Transistors | |
2N2906_12 | CENTRAL |
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PNP SILICON TRANSISTOR | |
2N2906A | BOCA |
获取价格 |
PNP SILICON PLANAR SWITCHING TRANSISTORS | |
2N2906A | NXP |
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PNP switching transistors | |
2N2906A | MICRO-ELECTRONICS |
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PNP SILICON GENERAL PURPOSE AMPLIFIERS AND SWITCHES | |
2N2906A | SEMICOA |
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Chip Type 2C2904A Geometry 0600 Polarity PNP | |
2N2906A | MICROSEMI |
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PNP SMALL SIGNAL SILICON TRANSISTOR | |
2N2906A | CENTRAL |
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Small Signal Transistors | |
2N2906A | RAYTHEON |
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Medium Current General Purpose Amplifiers and Switches | |
2N2906A | COMSET |
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GENERAL PURPOSE AMPLIFIERS TRANSISTORS |