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2N2906A PDF预览

2N2906A

更新时间: 2024-11-18 03:56:03
品牌 Logo 应用领域
雷神 - RAYTHEON 晶体开关放大器晶体管
页数 文件大小 规格书
2页 198K
描述
Medium Current General Purpose Amplifiers and Switches

2N2906A 数据手册

 浏览型号2N2906A的Datasheet PDF文件第2页 
2N2904  
Silicon PNP Transistor  
Data Sheet  
Description  
Applications  
General purpose  
Low power  
Semicoa Semiconductors offers:  
PNP silicon transistor  
Screening and processing per MIL-PRF-19500 Appendix E  
JAN level (2N2904J)  
JANTX level (2N2904JX)  
JANTXV level (2N2904JV)  
QCI to the applicable level  
100% die visual inspection per MIL-STD-750 method  
2072 for JANTXV  
Radiation testing (total dose) upon request  
Features  
Hermetically sealed TO-39 metal can  
Also available in chip configuration  
Chip geometry 0600  
Reference document:  
MIL-PRF-19500/290  
Benefits  
Qualification Levels: JAN, JANTX, and  
JANTXV  
Radiation testing available  
Please contact Semicoa for special configurations  
www.SEMICOA.com or (714) 979-1900  
Absolute Maximum Ratings  
TC = 25°C unless otherwise specified  
Parameter  
Collector-Emitter Voltage  
Collector-Base Voltage  
Emitter-Base Voltage  
Symbol  
VCEO  
VCBO  
Rating  
40  
Unit  
Volts  
Volts  
60  
Volts  
mA  
VEBO  
IC  
5
Collector Current, Continuous  
600  
W
Power Dissipation, TA = 25 °C  
Derate above 60 °C  
0.8  
PT  
PT  
5.7  
mW/°C  
W
Power Dissipation, TC = 25 °C  
3.0  
17.2  
mW/°C  
°C/W  
Derate above 25 °C  
Thermal Resistance  
175  
RθJA  
TJ  
°C  
°C  
Operating Junction Temperature  
Storage Temperature  
-65 to +200  
-65 to +200  
TSTG  
Semicoa Semiconductors, Inc.  
Copyright2002  
Rev. H  
333 McCormick Avenue, Costa Mesa, California 92626 714.979.1900, FAX 714.557.4541  
Page 1 of 1  
www.SEMICOA.com  

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