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2N2906A PDF预览

2N2906A

更新时间: 2024-02-28 03:29:38
品牌 Logo 应用领域
美高森美 - MICROSEMI 晶体小信号双极晶体管开关
页数 文件大小 规格书
2页 62K
描述
PNP SMALL SIGNAL SILICON TRANSISTOR

2N2906A 技术参数

生命周期:Obsolete包装说明:SMALL OUTLINE, R-PDSO-G6
针数:6Reach Compliance Code:unknown
ECCN代码:EAR99HTS代码:8541.21.00.75
风险等级:5.59Is Samacsys:N
最大集电极电流 (IC):0.2 A集电极-发射极最大电压:40 V
配置:SEPARATE, 2 ELEMENTS最小直流电流增益 (hFE):30
JESD-30 代码:R-PDSO-G6元件数量:2
端子数量:6封装主体材料:PLASTIC/EPOXY
封装形状:RECTANGULAR封装形式:SMALL OUTLINE
极性/信道类型:PNP认证状态:Not Qualified
表面贴装:YES端子形式:GULL WING
端子位置:DUAL晶体管应用:SWITCHING
晶体管元件材料:SILICON标称过渡频率 (fT):250 MHz
最大关闭时间(toff):300 ns最大开启时间(吨):70 ns
Base Number Matches:1

2N2906A 数据手册

 浏览型号2N2906A的Datasheet PDF文件第2页 
TECHNICAL DATA  
PNP SMALL SIGNAL SILICON TRANSISTOR  
Qualified per MIL-PRF-19500/ 291  
Devices  
2N2906A  
Qualified Level  
JAN  
2N2907A  
2N2906AL  
2N2906AUA  
2N2906AUB  
2N2907AL  
2N2907AUA  
2N2907AUB  
JANTX  
JANTXV  
JANS  
MAXIMUM RATINGS  
Ratings  
Symbol  
VCEO  
All Types Unit  
Collector-Emitter Voltage  
Collector-Base Voltage  
Emitter-Base Voltage  
Collector Current  
60  
Vdc  
60  
Vdc  
Vdc  
VCBO  
TO-18* (TO-206AA)  
5.0  
600  
VEBO  
mAdc  
IC  
Total Power Dissipation  
@ TA = +250C  
@ TC = +250C  
0.4  
1.8  
W
W
0C  
(1)  
PT  
(2 / 3)  
4 PIN*  
2N2906AUA, 2N2907AUA  
PT  
TJ, T  
Operating & Storage Junction Temperature Range  
-65 to +200  
stg  
1) Derate linearly 2.28 mW/0C for TA > +250C.  
2) Derate linearly 10.3 mW/0C for TC > +250C.  
3) For UA and UB surface mount case outlines: PT = 1.16 W;  
derate linearly 6.6mW/0C for TC > +250C.  
3 PIN*  
2N2906AUB, 2N2907AUB  
*See appendix A for package outline  
ELECTRICAL CHARACTERISTICS (TA = 250C unless otherwise noted)  
Characteristics  
Symbol  
Min.  
Max.  
Unit  
OFF CHARACTERISTICS  
Collector-Emitter Breakdown Voltage  
IC = 10 mAdc  
60  
Vdc  
V(BR)  
CEO  
Collector-Base Cutoff Current  
VCE = 50 Vdc  
VCE = 60 Vdc  
Collector-Base Cutoff Current  
VCE = 50 Vdc  
Emitter-Base Cutoff Current  
VEB = 4.0 Vdc  
mAdc  
hAdc  
ICBO  
ICES  
IEBO  
10  
10  
50  
hAdc  
hAdc  
mAdc  
50  
10  
VEB = 5.0 Vdc  
6 Lake Street, Lawrence, MA 01841  
1-800-446-1158 / (978) 794-1666 / Fax: (978) 689-0803  
120101  
Page 1 of 2  

2N2906A 替代型号

型号 品牌 替代类型 描述 数据表
JANS2N2906A MICROSEMI

完全替代

PNP SMALL SIGNAL SILICON TRANSISTOR
2N2906AL MICROSEMI

完全替代

PNP SMALL SIGNAL SILICON TRANSISTOR
JANTXV2N2906A MICROSEMI

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PNP SMALL SIGNAL SILICON TRANSISTOR

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