生命周期: | Obsolete | 包装说明: | SMALL OUTLINE, R-PDSO-G6 |
针数: | 6 | Reach Compliance Code: | unknown |
ECCN代码: | EAR99 | HTS代码: | 8541.21.00.75 |
风险等级: | 5.59 | Is Samacsys: | N |
最大集电极电流 (IC): | 0.2 A | 集电极-发射极最大电压: | 40 V |
配置: | SEPARATE, 2 ELEMENTS | 最小直流电流增益 (hFE): | 30 |
JESD-30 代码: | R-PDSO-G6 | 元件数量: | 2 |
端子数量: | 6 | 封装主体材料: | PLASTIC/EPOXY |
封装形状: | RECTANGULAR | 封装形式: | SMALL OUTLINE |
极性/信道类型: | PNP | 认证状态: | Not Qualified |
表面贴装: | YES | 端子形式: | GULL WING |
端子位置: | DUAL | 晶体管应用: | SWITCHING |
晶体管元件材料: | SILICON | 标称过渡频率 (fT): | 250 MHz |
最大关闭时间(toff): | 300 ns | 最大开启时间(吨): | 70 ns |
Base Number Matches: | 1 |
型号 | 品牌 | 替代类型 | 描述 | 数据表 |
JANS2N2906A | MICROSEMI |
完全替代 |
PNP SMALL SIGNAL SILICON TRANSISTOR | |
2N2906AL | MICROSEMI |
完全替代 |
PNP SMALL SIGNAL SILICON TRANSISTOR | |
JANTXV2N2906A | MICROSEMI |
类似代替 |
PNP SMALL SIGNAL SILICON TRANSISTOR |
型号 | 品牌 | 获取价格 | 描述 | 数据表 |
2N2906A_02 | SEMICOA |
获取价格 |
Silicon PNP Transistor | |
2N2906A_1 | MICROSEMI |
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RADIATION HARDENED | |
2N2906ACSM | SEME-LAB |
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SILICON PLANAR EPITAXIAL PNP TRANSISTOR | |
2N2906ADCSM | SEME-LAB |
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Dual Bipolar PNP Devices in a hermetically sealed | |
2N2906AJ.TX.V | RAYTHEON |
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Medium Current General Purpose Amplifiers and Switches | |
2N2906AL | MICROSEMI |
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PNP SMALL SIGNAL SILICON TRANSISTOR | |
2N2906AUA | MICROSEMI |
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PNP SMALL SIGNAL SILICON TRANSISTOR | |
2N2906AUAE3 | MICROSEMI |
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Small Signal Bipolar Transistor, 0.6A I(C), 60V V(BR)CEO, 1-Element, PNP, Silicon, CERAMIC | |
2N2906AUB | MICROSEMI |
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PNP SMALL SIGNAL SILICON TRANSISTOR | |
2N2906AUB | SEMICOA |
获取价格 |
Silicon PNP Transistor |