Datasheet > 2N2906A_02

2N2906A_02

更新时间： 2022-04-23 23:00:11

品牌	Logo	应用领域
SEMICOA		晶体晶体管
页数	文件大小	规格书
2页	212K
描述
Silicon PNP Transistor

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2N2906A_02 数据手册

2N2906A

Silicon PNP Transistor

Data Sheet

Description

Applications

• General purpose

• Low power

Semicoa Semiconductors offers:

• PNP silicon transistor

• Screening and processing per MIL-PRF-19500 Appendix E

• JAN level (2N2906AJ)

• JANTX level (2N2906AJX)

• JANTXV level (2N2906AJV)

• JANS level (2N2906AJS)

• QCI to the applicable level

• 100% die visual inspection per MIL-STD-750 method

2072 for JANTXV and JANS

• Radiation testing (total dose) upon request

Features

• Hermetically sealed TO-18 metal can

• Also available in chip configuration

• Chip geometry 0600

• Reference document:

MIL-PRF-19500/291

Benefits

• Qualification Levels: JAN, JANTX,

JANTXV and JANS

Please contact Semicoa for special configurations

www.SEMICOA.com or (714) 979-1900

• Radiation testing available

Absolute Maximum Ratings

T_C= 25°C unless otherwise specified

Parameter

Collector-Emitter Voltage

Collector-Base Voltage

Symbol

V_CEO

V_CBO

Rating

Unit

Volts

Emitter-Base Voltage

V_EBO

I_C

Collector Current, Continuous

600

Power Dissipation, T_A= 25^OC

0.5

mW/°C

°C/W

P_T

Derate linearly above 37.5 ^OC

3.08

Thermal Resistance

325

R_θJA

T_J

°C

Operating Junction Temperature

Storage Temperature

-65 to +200

T_STG

Semicoa Semiconductors, Inc.

Rev. J

333 McCormick Avenue, Costa Mesa, California 92626 714.979.1900, FAX 714.557.4541

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www.SEMICOA.com

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