是否无铅: | 含铅 | 是否Rohs认证: | 不符合 |
生命周期: | Active | 零件包装代码: | LCC |
包装说明: | SMALL OUTLINE, R-CDSO-N6 | 针数: | 6 |
Reach Compliance Code: | compliant | ECCN代码: | EAR99 |
HTS代码: | 8541.21.00.75 | 风险等级: | 5.21 |
Is Samacsys: | N | 最大集电极电流 (IC): | 0.6 A |
集电极-发射极最大电压: | 60 V | 配置: | SEPARATE, 2 ELEMENTS |
最小直流电流增益 (hFE): | 40 | JEDEC-95代码: | MO-041BB |
JESD-30 代码: | R-CDSO-N6 | 元件数量: | 2 |
端子数量: | 6 | 封装主体材料: | CERAMIC, METAL-SEALED COFIRED |
封装形状: | RECTANGULAR | 封装形式: | SMALL OUTLINE |
峰值回流温度(摄氏度): | NOT SPECIFIED | 极性/信道类型: | PNP |
认证状态: | Not Qualified | 表面贴装: | YES |
端子形式: | NO LEAD | 端子位置: | DUAL |
处于峰值回流温度下的最长时间: | NOT SPECIFIED | 晶体管元件材料: | SILICON |
标称过渡频率 (fT): | 200 MHz | Base Number Matches: | 1 |
型号 | 品牌 | 获取价格 | 描述 | 数据表 |
2N2906AJ.TX.V | RAYTHEON |
获取价格 |
Medium Current General Purpose Amplifiers and Switches | |
2N2906AL | MICROSEMI |
获取价格 |
PNP SMALL SIGNAL SILICON TRANSISTOR | |
2N2906AUA | MICROSEMI |
获取价格 |
PNP SMALL SIGNAL SILICON TRANSISTOR | |
2N2906AUAE3 | MICROSEMI |
获取价格 |
Small Signal Bipolar Transistor, 0.6A I(C), 60V V(BR)CEO, 1-Element, PNP, Silicon, CERAMIC | |
2N2906AUB | MICROSEMI |
获取价格 |
PNP SMALL SIGNAL SILICON TRANSISTOR | |
2N2906AUB | SEMICOA |
获取价格 |
Silicon PNP Transistor | |
2N2906AUBC | MICROSEMI |
获取价格 |
RADIATION HARDENED | |
2N2906CSM | SEME-LAB |
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Bipolar PNP Device in a Hermetically sealed LCC1 | |
2N2906DCSM | SEME-LAB |
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Dual Bipolar PNP Devices in a hermetically sealed | |
2N2906E | KEC |
获取价格 |
EPITAXIAL PLANAR PNP TRANSISTOR (GENERAL PURPOSE, SWITCHING) |