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2N2907_11 PDF预览

2N2907_11

更新时间: 2024-11-22 07:28:23
品牌 Logo 应用领域
美微科 - MCC 晶体开关晶体管
页数 文件大小 规格书
3页 444K
描述
PNP Switching Transistors

2N2907_11 数据手册

 浏览型号2N2907_11的Datasheet PDF文件第2页浏览型号2N2907_11的Datasheet PDF文件第3页 
M C C  
2N2907  
2N2907A  
TM  
ꢀꢁꢂꢃꢄꢅꢆꢄꢇꢇꢈꢃꢂꢁꢉꢊꢅꢆomponents  
20736 Marilla Street Chatsworth  
ꢆꢋꢅꢌꢍꢎꢍꢍ  
ꢏꢐꢄꢑꢈꢒꢅꢓꢔꢍꢔ ꢅ!ꢕꢍ"#ꢌꢎꢎ  
$ꢉ%ꢒꢅ   ꢓꢔꢍꢔ ꢅ!ꢕꢍ"#ꢌꢎꢌ  
Micro Commercial Components  
Features  
High current (max.600mA)  
Low voltage (max.60V)  
Lead Free Finish/RoHS Compliant(Note 1) ("P" Suffix designates  
RoHS Compliant. See ordering information)  
PNP Switching  
Transistors  
Maximum Ratings  
Symbol  
VCEO  
Rating  
Collector-Emitter Voltage  
2N2907  
Rating  
Unit  
TO-18  
40  
60  
V
2N2907A  
VCBO  
Collector-Base Voltage  
Emitter-Base Voltage  
Collector Current (DC)  
Peak Collector Current  
Peak Base Current  
60  
5.0  
V
VEBO  
IC  
V
600  
mA  
mA  
mA  
OC  
OC  
ICM  
IBM  
TJ  
800  
200  
Operating Junction Temperature  
Storage Temperature  
-55 to +150  
-55 to +150  
TSTG  
Thermal Characteristics  
Symbol  
Rating  
Max  
Unit  
Total power Dissipation  
TA25℃  
TC25℃  
Ptot  
400  
1.2  
mW  
W
RJC  
RJA  
Thermal Resistance, Junction to Case  
146  
350  
K/W  
K/W  
Thermal Resistance, Junction to Ambient  
O
Electrical Characteristics @ 25 C Unless Otherwise Specified  
Symbol  
Parameter  
Min  
Max  
Units  
OFF CHARACTERISTICS  
Collector cut-off current  
(VCB=50Vdc, IE=0)  
(VCB=50Vdc, IE=0,TA=150)  
(VCB=50Vdc, IE=0)  
(VCB=50Vdc, IE=0,TA=150)  
2N2907  
---  
---  
---  
---  
---  
20  
20  
10  
10  
50  
nAdc  
uAdc  
nAdc  
uAdc  
nAdc  
ICBO  
2N2907A  
DIMENSIONS  
Emitter Cut-off current  
(IC=0, VEB=5.0Vdc)  
IEBO  
INCHES  
MM  
DIM  
A
B
C
D
E
MIN  
MAX  
.230  
.195  
.210  
.75  
MIN  
MAX  
NOTE  
Φ
DC Current Gain  
2N2907  
.209  
.178  
.170  
.50  
5.309 5.842  
4.521 4.953  
4.318 5.334  
(IC=0.1mAdc, VCE=10Vdc)  
(IC=1.0mAdc, VCE=10Vdc)  
(IC=10mAdc, VCE=10Vdc)  
(IC=150mAdc, VCE=10Vdc)*  
(IC=500mAdc, VCE=10Vdc)*  
DC Current Gain  
(IC=0.1mAdc, VCE=10Vdc)  
(IC=1.0mAdc, VCE=10Vdc)  
(IC=10mAdc, VCE=10Vdc)  
(IC=150mAdc, VCE=10Vdc)*  
(IC=500mAdc, VCE=10Vdc)*  
35  
50  
75  
100  
30  
Φ
hFE  
12.7  
19.05  
2.54  
7.112 1.219  
----- 1.27  
0.229 0.787  
44° 46°  
300  
.100  
ΦTYP  
F
.028  
-----  
.009  
44°  
.036  
.016  
.048  
.050  
.031  
46°  
.046  
.021  
2N2907A  
G
H
J
K
L
75  
100  
100  
100  
50  
hFE  
300  
0.914 1.168  
0.406 0.533  
Notes:1.High Temperature Solder Exemption Applied, see EU Directive Annex 7.  
www.mccsemi.com  
1 of 3  
Revision: A  
2011/01/01  

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